The technology of He ion implantation for improving the catastrophic optical damage (COD) level of 980nm semiconductor lasers is introduced.After He ion implantation,p-GaAs obtain higher resistivity than before.About...The technology of He ion implantation for improving the catastrophic optical damage (COD) level of 980nm semiconductor lasers is introduced.After He ion implantation,p-GaAs obtain higher resistivity than before.About 25μm-long current non-injection regions are introduced near both facets,where the injection current is blocked by high resistivity area.The current non-injection regions can reduce carriers inject to facets,and the rate of the non-radiative recombination are reduced.So the COD level is higher than before.The He ion implantation LDs exhibit no COD failure until the rollover occure at a mean maximum power of 440.5mW.Mean COD level of conventional LDs is given as 407.5mW.Compared to conventional LDs,the mean maximum output power level of He ion implantation LDs is improved by 8%.展开更多
文摘The technology of He ion implantation for improving the catastrophic optical damage (COD) level of 980nm semiconductor lasers is introduced.After He ion implantation,p-GaAs obtain higher resistivity than before.About 25μm-long current non-injection regions are introduced near both facets,where the injection current is blocked by high resistivity area.The current non-injection regions can reduce carriers inject to facets,and the rate of the non-radiative recombination are reduced.So the COD level is higher than before.The He ion implantation LDs exhibit no COD failure until the rollover occure at a mean maximum power of 440.5mW.Mean COD level of conventional LDs is given as 407.5mW.Compared to conventional LDs,the mean maximum output power level of He ion implantation LDs is improved by 8%.
