Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and op...Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.展开更多
Tantalum(Ⅴ)propoxide(Ta(OPrn)5),isopropoxide(Ta(OPr i )5)and butoxide(Ta(OBu n )5)were synthesized by electro- chemical reactions of corresponding alcohol at sacrificial tantalum anode in the presence of tetraethylam...Tantalum(Ⅴ)propoxide(Ta(OPrn)5),isopropoxide(Ta(OPr i )5)and butoxide(Ta(OBu n )5)were synthesized by electro- chemical reactions of corresponding alcohol at sacrificial tantalum anode in the presence of tetraethylammonium chloride as a conductive additive.The pure products were isolated by reduced pressure distillation under 5 kPa.The crystal of Ta(OPri)5 was obtained by recrystallization from hexane at-10℃.These samples were characterized by Fourier transform infrared spectra(FT-IR), Raman spectra,nuclear magnetic resonance spectra(NMR),TG/DTA and ICP-MS.The results show that direct electrochemical synthesis of metal alkoxides has a high current efficiency and electrolysis yield.These alkoxides have a high purity of 99.97%and can be directly used as the precursor of Ta2O5 films.展开更多
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.
基金Project(2007AA03Z425)supported by the Hi-tech Research and Development Program of ChinaProject(50404011)supported by the National Natural Science Foundation of China
文摘Tantalum(Ⅴ)propoxide(Ta(OPrn)5),isopropoxide(Ta(OPr i )5)and butoxide(Ta(OBu n )5)were synthesized by electro- chemical reactions of corresponding alcohol at sacrificial tantalum anode in the presence of tetraethylammonium chloride as a conductive additive.The pure products were isolated by reduced pressure distillation under 5 kPa.The crystal of Ta(OPri)5 was obtained by recrystallization from hexane at-10℃.These samples were characterized by Fourier transform infrared spectra(FT-IR), Raman spectra,nuclear magnetic resonance spectra(NMR),TG/DTA and ICP-MS.The results show that direct electrochemical synthesis of metal alkoxides has a high current efficiency and electrolysis yield.These alkoxides have a high purity of 99.97%and can be directly used as the precursor of Ta2O5 films.
