Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i...Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.展开更多
以磁控溅射制备的ZnO纳米晶薄膜作为籽晶层,用水热法在80℃氧化铟锡(indium tin oxide,ITO)玻璃衬底上,实现了大面积ZnO纳米线阵列膜的取向生长,制备了3种金属-半导体-金属(metal-semiconductor-metal,MSM)结构的ZnO半导体纳米线阵列膜...以磁控溅射制备的ZnO纳米晶薄膜作为籽晶层,用水热法在80℃氧化铟锡(indium tin oxide,ITO)玻璃衬底上,实现了大面积ZnO纳米线阵列膜的取向生长,制备了3种金属-半导体-金属(metal-semiconductor-metal,MSM)结构的ZnO半导体纳米线阵列膜样品,测试了薄膜样品的光学特性和I-V特性。结果表明:在相同的生长液浓度下,籽晶层对所生长的纳米线尺度分布有显著影响。所制备的纳米线薄膜在室温下具有显著的紫外带边发射特性。ZnO纳米线/Ag和ZnO纳米线/Al的金属-半导体接触均具有明显的Schottky接触特性,而ZnO纳米线/Au的金属-半导体接触具有明显Ohmic接触特性。展开更多
For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied ...For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.展开更多
文摘Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
文摘以磁控溅射制备的ZnO纳米晶薄膜作为籽晶层,用水热法在80℃氧化铟锡(indium tin oxide,ITO)玻璃衬底上,实现了大面积ZnO纳米线阵列膜的取向生长,制备了3种金属-半导体-金属(metal-semiconductor-metal,MSM)结构的ZnO半导体纳米线阵列膜样品,测试了薄膜样品的光学特性和I-V特性。结果表明:在相同的生长液浓度下,籽晶层对所生长的纳米线尺度分布有显著影响。所制备的纳米线薄膜在室温下具有显著的紫外带边发射特性。ZnO纳米线/Ag和ZnO纳米线/Al的金属-半导体接触均具有明显的Schottky接触特性,而ZnO纳米线/Au的金属-半导体接触具有明显Ohmic接触特性。
基金supported by the Natural Science Foundation of Gansu Province,China(Grant No.145RJZA226)Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2013-35)Beijing Municipal Commission of Science and Technology(Grant Nos.Z131100006013005 and Z131100006013004)
文摘For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.
