基于沟道调制效应、串联电阻效应的考虑 ,首先建立了一个和实验室符合很好的 6H-Si C JFET的模型 ,在该模型中采用了两级电离杂质模型和 Caughey-Thomas方程 ,接着在分析中子辐照对 Si C JFET电参数如电子浓度、迁移率、电阻率和空间电...基于沟道调制效应、串联电阻效应的考虑 ,首先建立了一个和实验室符合很好的 6H-Si C JFET的模型 ,在该模型中采用了两级电离杂质模型和 Caughey-Thomas方程 ,接着在分析中子辐照对 Si C JFET电参数如电子浓度、迁移率、电阻率和空间电荷区密度影响的基础上 ,对 Si C JFET在室温和 30 0℃时的辐照响应进行了模拟。展开更多
To explore the nonlinear activities of the cellular signaling system composed of one transcriptional arm and one protein-interaction arm, we use an irradiation-response module to study the dynamics of stochastic inter...To explore the nonlinear activities of the cellular signaling system composed of one transcriptional arm and one protein-interaction arm, we use an irradiation-response module to study the dynamics of stochastic interactions. It is shown that the oscillatory behavior could be described in a unified way when the radiation-derived signal and noise are incorporated.展开更多
文摘基于沟道调制效应、串联电阻效应的考虑 ,首先建立了一个和实验室符合很好的 6H-Si C JFET的模型 ,在该模型中采用了两级电离杂质模型和 Caughey-Thomas方程 ,接着在分析中子辐照对 Si C JFET电参数如电子浓度、迁移率、电阻率和空间电荷区密度影响的基础上 ,对 Si C JFET在室温和 30 0℃时的辐照响应进行了模拟。
基金Supported by the National Natural Science Foundation of China under Grant No.10975019the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Personnel of China under Grant No.MOP2006138
文摘To explore the nonlinear activities of the cellular signaling system composed of one transcriptional arm and one protein-interaction arm, we use an irradiation-response module to study the dynamics of stochastic interactions. It is shown that the oscillatory behavior could be described in a unified way when the radiation-derived signal and noise are incorporated.
