Y2000-62474—731 0101959超薄氧化物中的低压隧道效应:界面态与衰降监视器=Low voltage tunneling in ultra-thin oxides:a monitorfor interface states and degradation[会,英]/Ghetti,A.& Sangiorgi,E.//1999 IEEE Internationa...Y2000-62474—731 0101959超薄氧化物中的低压隧道效应:界面态与衰降监视器=Low voltage tunneling in ultra-thin oxides:a monitorfor interface states and degradation[会,英]/Ghetti,A.& Sangiorgi,E.//1999 IEEE International Electron De-vices Meeting.—731～734(PC)Y2000-62185-179 0101960镉砷化物薄膜器件的介质击穿和电沉淀现象=Dielec-tric breakdown and electrofoming phenomenon in thecadmium Arsenide thin films devices[会,英]/Din,M.B.H.& Gould,R.D.//1998 IEEE International Con-ference on Semiconductor Electronics.—179～183(E)展开更多
The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in...The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.展开更多
An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices；An intelligent system for advanced dynamic security assessment；Ancient raw copper fro...An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices；An intelligent system for advanced dynamic security assessment；Ancient raw copper from primary smelting sites in Cyprus;Anthropogenic plutonium in soils of the Ural展开更多
文摘Y2000-62474—731 0101959超薄氧化物中的低压隧道效应:界面态与衰降监视器=Low voltage tunneling in ultra-thin oxides:a monitorfor interface states and degradation[会,英]/Ghetti,A.& Sangiorgi,E.//1999 IEEE International Electron De-vices Meeting.—731～734(PC)Y2000-62185-179 0101960镉砷化物薄膜器件的介质击穿和电沉淀现象=Dielec-tric breakdown and electrofoming phenomenon in thecadmium Arsenide thin films devices[会,英]/Din,M.B.H.& Gould,R.D.//1998 IEEE International Con-ference on Semiconductor Electronics.—179～183(E)
文摘The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.
文摘An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices；An intelligent system for advanced dynamic security assessment；Ancient raw copper from primary smelting sites in Cyprus;Anthropogenic plutonium in soils of the Ural
