The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the ...The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650 ℃annealing for both p- and n-type samples. Atomic force microscopy （AFM） is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650 ℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface axe investigated using x-ray photoelectron spectroscopy （XPS）. The results of C ls and Si 2p core-level spectra axe presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. The authors express their gratitude to Ma Nongnong of Tianjin Electronic Materials Research Institute for performing SIMS measurements and to Li Ying of Xi＇an University of Technology for performing XPS measurements.
文摘The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650 ℃annealing for both p- and n-type samples. Atomic force microscopy （AFM） is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650 ℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface axe investigated using x-ray photoelectron spectroscopy （XPS）. The results of C ls and Si 2p core-level spectra axe presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.
