A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103...A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.展开更多
文摘A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.
基金The authors would like to thank the financial supports from Feng Chia University (FCU) and National Science Council (NSC). The implementation supports of integrated circuits by CIC and TSMC are also appreciated.
