Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for ...Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.展开更多
1981年7月,我参加了在英国剑桥召开的“非线性最优化高级研究会”(NATO Advanced Research Institute on Nonlinear Optimization)。关于这次会议的情况,已在文献[1]中作了介绍,在此仅就其中几个问题作稍详细的讨论。 一、无约束最优化...1981年7月,我参加了在英国剑桥召开的“非线性最优化高级研究会”(NATO Advanced Research Institute on Nonlinear Optimization)。关于这次会议的情况,已在文献[1]中作了介绍,在此仅就其中几个问题作稍详细的讨论。 一、无约束最优化的信赖域方法 众所周知。展开更多
文摘Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade offs. The 1.9GHz Complementary Metal Oxide Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.
文摘1981年7月,我参加了在英国剑桥召开的“非线性最优化高级研究会”(NATO Advanced Research Institute on Nonlinear Optimization)。关于这次会议的情况,已在文献[1]中作了介绍,在此仅就其中几个问题作稍详细的讨论。 一、无约束最优化的信赖域方法 众所周知。
