In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible t...In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.展开更多
Crystalline SiO2 (c-SiO2) samples were implanted at room temperature (RT) with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These sampl...Crystalline SiO2 (c-SiO2) samples were implanted at room temperature (RT) with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These samples were annealed in vacuum under 500, 700, 900 and 1 100℃, respectively. The modification of the samples was investigated at RT by using a Spectrum GX IR spectroscopy.展开更多
基金supported by the National Basic Research Program of China(Grant No.2015CB352100)
文摘In this work, we studied on the boron-ions implantation, including the implant dose and post-annealing temperature on the performance of PMOS radiation field-effect transistors(RADFETs) in experimental. The possible traps and defects induced by ions implantation in the gate-oxide and their further impacting on the sensitivity and dose range of RADFETs were analyzed qualitatively. Our devices had the dry/wet/dry sandwich gate-oxide of 420 nm thick. Different ion-implanting doses and post-annealing temperatures were carried out during the RADFETs fabrication. We built a real time auto-measurement system to realize the auto-state-switch between irradiation and read-out modes, and in-situ measurement of output voltage for ten devices in turn at once of radiation experiment. The threshold voltage, dose range and sensitivity of RADFETs were extracted and analyzed in detail. The results showed that the highest sensitivity of 229 mV/Gy achieved when the implant dose was2.2×1011 cm.2 and the post-annealing temperature was 1000°C, and the dose range of 34 Gy as well.
基金Supported by National Natural Science Foundation of China (10125522,10475102)
文摘Crystalline SiO2 (c-SiO2) samples were implanted at room temperature (RT) with 120 keV C-ions and the selected implantation doses were 2.0×1017, 5.0×1017, 8. 6×1017 and 1. 2×1017 C/cm2. These samples were annealed in vacuum under 500, 700, 900 and 1 100℃, respectively. The modification of the samples was investigated at RT by using a Spectrum GX IR spectroscopy.
