The space charge behavior of a dielectric under HVDC is influenced by the charge trap energy distribution in it. Hence, we in- vestigated the charge trap distributions in several kinds of typical polymer materials usi...The space charge behavior of a dielectric under HVDC is influenced by the charge trap energy distribution in it. Hence, we in- vestigated the charge trap distributions in several kinds of typical polymer materials using thermally stimulated discharge (TSD) and photo-stimulated discharge (PSD) methods, respectively. The experimental results show that,there is a significant difference between the trap energy distributions obtained by the two methods, but the difference decreases with the increase of the melting point of polymers. This is attributed to the change of the trap center environment during TSD caused by the increasing movements of both main chains and branched chains in polymers. PSD method is more accurate for investigating charge trap distribution in dielectrics, especially for polymers with low melting points.展开更多
基金Project supported by National Natural Science Foundation of China (51077101, 51277133), National Basic Research Program of China (973 Program) (2009CB 724505).
文摘The space charge behavior of a dielectric under HVDC is influenced by the charge trap energy distribution in it. Hence, we in- vestigated the charge trap distributions in several kinds of typical polymer materials using thermally stimulated discharge (TSD) and photo-stimulated discharge (PSD) methods, respectively. The experimental results show that,there is a significant difference between the trap energy distributions obtained by the two methods, but the difference decreases with the increase of the melting point of polymers. This is attributed to the change of the trap center environment during TSD caused by the increasing movements of both main chains and branched chains in polymers. PSD method is more accurate for investigating charge trap distribution in dielectrics, especially for polymers with low melting points.