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Charge and Energy Transfer in the Metal-free Indoline Dyes for Dye-sensitized Solar Cells
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作者 Li-ying Diao Wen-xiang Gu +1 位作者 Yue-hui Chen Feng-cai Ma 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2006年第3期238-242,共5页
Metal-free indoline dyes for dye-sensitized solar cells were studied by employing quantum chemistry methods. Comparative study of the properties of both ground and excited states of metal-free indoline dyes for dye-se... Metal-free indoline dyes for dye-sensitized solar cells were studied by employing quantum chemistry methods. Comparative study of the properties of both ground and excited states of metal-free indoline dyes for dye-sensitized solar cells revealed: (i) as the number of rhodanine rings increases, the energy difference between HOMO and LUMO decreases and there is a red shift in the absorption spectrum with the binding energy increased, and the transition dipole moment decreased; (ii) Based on an analysis of charge differential density, we observed that the charge and energy are transfered from the phenylethenyl to the indoline and rhodanine rings; (iii) The electron-hole coherences are mainly on the indoline and rhodanine rings, and the exciton sizes are 30 and 40 atoms for indoline dyes with one and two rhodanline rings, respectively. These results serve as a good example of computer-aided design in metal-free indoline dyes for dye-sensitized solar cells. 展开更多
关键词 Charge and energy transfer Electron-hole coherence Indoline dyes Metal-free for dyesensitized solar cells
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1,3-二氮杂薁类衍生物电子结构和光谱性质的理论研究 被引量:1
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作者 李满宇 朱耘玑 +2 位作者 艾希成 孙萌涛 张建平 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2008年第11期2277-2280,共4页
对1,3-二氮杂薁类衍生物采用密度泛函理论(DFT)在B3LYP/6-31G(d)的水平上进行了几何构型的全优化,在此基础上探讨了分子结构和前线分子轨道能量等性质的变化规律,采用含时密度泛函理论(TD-DFT)计算了分子的电子跃迁性质,采用二维平面图... 对1,3-二氮杂薁类衍生物采用密度泛函理论(DFT)在B3LYP/6-31G(d)的水平上进行了几何构型的全优化,在此基础上探讨了分子结构和前线分子轨道能量等性质的变化规律,采用含时密度泛函理论(TD-DFT)计算了分子的电子跃迁性质,采用二维平面图和三维立体图来直观表示激发态的性质,研究分子内电子转移特性.跃迁密度矩阵的二维等高线图反映了电子-空穴相干性,三维跃迁密度图反映了跃迁偶极矩的方向和强度,三维电荷差异密度图说明了激发过程中分子内电子转移性质. 展开更多
关键词 1 3-二氮杂薁 分子内电子转移 跃迁密度 电荷差异密度 电子-空穴相干性
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