The predictive capacity of numerical analyses in geotechnical engineering depends strongly on the efficiency of constitutive models used for modeling of interfaces behavior.Interfaces are considered as thin layers of ...The predictive capacity of numerical analyses in geotechnical engineering depends strongly on the efficiency of constitutive models used for modeling of interfaces behavior.Interfaces are considered as thin layers of the soil adjacent to structures boundary whose major role is transferring loads from structures to soil masses.An interface model within the bounding surface plasticity framework and the critical state soil mechanics is presented.To this aim,general formulation of the interface model according to the bounding surface plasticity theory is described first.Similar to granular soils,it has been shown that the mechanical behavior of sand-structure interfaces is highly affected by the interface state that is the combined influences of density and applied normal stress.Therefore,several ingredients of the model are directly related to the interface state.As a result of this feature,the model is enabled to distinguish interfaces in dense state from those in loose state and to provide realistic predictions over wide ranges of density and normal stress values.In evaluation of the model,a reasonable correspondence between the model predictions and the experimental data of various research teams is found.展开更多
Using the generalized uncertainty relation, the new equation of state density is obtained, and then the entropy of black hole with an internal global monopole is discussed. The divergence that appears in black hole en...Using the generalized uncertainty relation, the new equation of state density is obtained, and then the entropy of black hole with an internal global monopole is discussed. The divergence that appears in black hole entropy calculation through original brick-wall model is overcome. The result of the direct proportion between black hole entropy and its event horizon area is drawn and given. The result shows that the black hole entropy must be the entropy of quantum state near the event horizon.展开更多
The effects of manganese dioxide (MnO 2 ) additives on the electrical characteristics of the Al-doped ZnO varistors are investigated. The leakage current densities of the samples decrease first and then increase again...The effects of manganese dioxide (MnO 2 ) additives on the electrical characteristics of the Al-doped ZnO varistors are investigated. The leakage current densities of the samples decrease first and then increase again with the increase of the amount of MnO 2 additives. Correspondingly, the nonlinear coefficients of the samples keep on increasing and then decrease. In addition, the donor densities increase monotonously with the amount of the doped MnO 2 increasing. The effects of MnO 2 additives on the electrical characteristics of the samples are different from the conclusion of previous literatures. The reasons of the distinct effects are supposed to be related with the donor and interface state densities of the samples.展开更多
The nuclear mean-field potential built up during the ^(12)C+^(12)C and ^(16)O+^(16)O collisions at low energies relevant for the carbon-and oxygen-burning processes is constructed within the double-folding model(DFM) ...The nuclear mean-field potential built up during the ^(12)C+^(12)C and ^(16)O+^(16)O collisions at low energies relevant for the carbon-and oxygen-burning processes is constructed within the double-folding model(DFM) using the realistic ground-state densities of^(12)C and^(16)O, and CDM3Yn density-dependent nucleon–nucleon(NN) interaction. The rearrangement term, indicated by the Hugenholtz–van Hove theorem for the single-particle energy in nuclear matter, is properly considered in the DFM calculation. To validate the use of the density-dependent NN interaction at low energies, an adiabatic approximation was suggested for the dinuclear overlap density. The reliability of the nucleus–nucleus potential predicted through this low-energy version of the DFM was tested in the optical model(OM) analysis of the elastic^(12)C+^(12)C and ^(16)O+^(16)O scattering data at energies below 10 MeV/nucleon.These OM results provide a consistently good description of the elastic angular distributions and 90 excitation function. The dinuclear mean-field potential predicted by the DFM is further used to determine the astrophysical S factor of the ^(12)C+^(12)C and ^(16)O+^(16)O fusions in the barrier penetration model. Without any adjustment of the potential strength, our results reproduce the non-resonant behavior of the S factor of the ^(12)C+^(12)C and ^(16)O+^(16)O fusions very well over a wide range of energies.展开更多
Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneo...Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.展开更多
With the help of supercell method, the first-principle calculations were performed for the study of doping crystal Mg1-xAlxB2 and Mg（B1-yCy）2. Analyzing the variations of the charge distribution and the partial dens...With the help of supercell method, the first-principle calculations were performed for the study of doping crystal Mg1-xAlxB2 and Mg（B1-yCy）2. Analyzing the variations of the charge distribution and the partial densities of states, we found that the compounds with doping Al to MgB2 compound and/or replacing boron by carbon exhibit new covalent bond effects and unexpected electronic properties, related to superconductivity. The study of the density of states indicates that superconductivity decreases with the increase of Al fraction and carbon concentration. There exists a transition of superconductor to non-superconductor with the change of Al doping fraction. The substitution of boron by carbon results in the decrease of the transition temperature since the decrease of the electron concentration and the lattice constant. The theoretical predictions agree with experimental observations.展开更多
Electron relaxation time and density of states near the Fermi level were calculated for ＂dirty＂ carbon nanotubes taking into account multiple elastic electrons scattering on impurities and structural inhomogeneities...Electron relaxation time and density of states near the Fermi level were calculated for ＂dirty＂ carbon nanotubes taking into account multiple elastic electrons scattering on impurities and structural inhomogeneities of a short-range order type. A possible explanation of low-temperature behavior of density of states and electrical conductivity depending on defect structure, impurities and chirality is presented.展开更多
文摘The predictive capacity of numerical analyses in geotechnical engineering depends strongly on the efficiency of constitutive models used for modeling of interfaces behavior.Interfaces are considered as thin layers of the soil adjacent to structures boundary whose major role is transferring loads from structures to soil masses.An interface model within the bounding surface plasticity framework and the critical state soil mechanics is presented.To this aim,general formulation of the interface model according to the bounding surface plasticity theory is described first.Similar to granular soils,it has been shown that the mechanical behavior of sand-structure interfaces is highly affected by the interface state that is the combined influences of density and applied normal stress.Therefore,several ingredients of the model are directly related to the interface state.As a result of this feature,the model is enabled to distinguish interfaces in dense state from those in loose state and to provide realistic predictions over wide ranges of density and normal stress values.In evaluation of the model,a reasonable correspondence between the model predictions and the experimental data of various research teams is found.
基金Youth Scientific Foundation of Sichuan Education Department，国家自然科学基金
文摘Using the generalized uncertainty relation, the new equation of state density is obtained, and then the entropy of black hole with an internal global monopole is discussed. The divergence that appears in black hole entropy calculation through original brick-wall model is overcome. The result of the direct proportion between black hole entropy and its event horizon area is drawn and given. The result shows that the black hole entropy must be the entropy of quantum state near the event horizon.
基金supported by the National Natural Science Foundations of China (Grant No. 50737001)
文摘The effects of manganese dioxide (MnO 2 ) additives on the electrical characteristics of the Al-doped ZnO varistors are investigated. The leakage current densities of the samples decrease first and then increase again with the increase of the amount of MnO 2 additives. Correspondingly, the nonlinear coefficients of the samples keep on increasing and then decrease. In addition, the donor densities increase monotonously with the amount of the doped MnO 2 increasing. The effects of MnO 2 additives on the electrical characteristics of the samples are different from the conclusion of previous literatures. The reasons of the distinct effects are supposed to be related with the donor and interface state densities of the samples.
基金supported,in part,by the National Foundation for Scientific and Technological Development(NAFOSTED Project No.103.04-2017.317)
文摘The nuclear mean-field potential built up during the ^(12)C+^(12)C and ^(16)O+^(16)O collisions at low energies relevant for the carbon-and oxygen-burning processes is constructed within the double-folding model(DFM) using the realistic ground-state densities of^(12)C and^(16)O, and CDM3Yn density-dependent nucleon–nucleon(NN) interaction. The rearrangement term, indicated by the Hugenholtz–van Hove theorem for the single-particle energy in nuclear matter, is properly considered in the DFM calculation. To validate the use of the density-dependent NN interaction at low energies, an adiabatic approximation was suggested for the dinuclear overlap density. The reliability of the nucleus–nucleus potential predicted through this low-energy version of the DFM was tested in the optical model(OM) analysis of the elastic^(12)C+^(12)C and ^(16)O+^(16)O scattering data at energies below 10 MeV/nucleon.These OM results provide a consistently good description of the elastic angular distributions and 90 excitation function. The dinuclear mean-field potential predicted by the DFM is further used to determine the astrophysical S factor of the ^(12)C+^(12)C and ^(16)O+^(16)O fusions in the barrier penetration model. Without any adjustment of the potential strength, our results reproduce the non-resonant behavior of the S factor of the ^(12)C+^(12)C and ^(16)O+^(16)O fusions very well over a wide range of energies.
基金supported by the National Key Research and Development Program(Grant No.2016YFB0400500)the National Grid Science&Technology Project(Grant No.5455DW150006)+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2017JM6003)the Industrial Research Project of Science and Technology Department of Shaanxi Province(Grant No.2016GY-076)the 111 Project(Grant No.B12026)
文摘Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.
基金Natural Science Foundation of Hubei Province of China under Grant No.2007ABA035
文摘With the help of supercell method, the first-principle calculations were performed for the study of doping crystal Mg1-xAlxB2 and Mg（B1-yCy）2. Analyzing the variations of the charge distribution and the partial densities of states, we found that the compounds with doping Al to MgB2 compound and/or replacing boron by carbon exhibit new covalent bond effects and unexpected electronic properties, related to superconductivity. The study of the density of states indicates that superconductivity decreases with the increase of Al fraction and carbon concentration. There exists a transition of superconductor to non-superconductor with the change of Al doping fraction. The substitution of boron by carbon results in the decrease of the transition temperature since the decrease of the electron concentration and the lattice constant. The theoretical predictions agree with experimental observations.
文摘Electron relaxation time and density of states near the Fermi level were calculated for ＂dirty＂ carbon nanotubes taking into account multiple elastic electrons scattering on impurities and structural inhomogeneities of a short-range order type. A possible explanation of low-temperature behavior of density of states and electrical conductivity depending on defect structure, impurities and chirality is presented.
