Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amo...Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.展开更多
Infineon公司的IMBF170R1K0M1是CoolSi^(TM)C1700V SiC Trench MOSFET,采用TO-2637L表面安装器件(SMD)封装,漏极和源极的爬电距离大约为7mm,这样安全标准很容易满足.单独驱动器的源引脚有助于降低栅极回路寄生电感,以避免栅极激振效应....Infineon公司的IMBF170R1K0M1是CoolSi^(TM)C1700V SiC Trench MOSFET,采用TO-2637L表面安装器件(SMD)封装,漏极和源极的爬电距离大约为7mm,这样安全标准很容易满足.单独驱动器的源引脚有助于降低栅极回路寄生电感,以避免栅极激振效应.器件最适合用在反激拓扑,12V/0V栅源极电压和大多数的反激控制器兼容,具有非常低的开关损耗,完全可控制d V/dt以适宜EMI优化.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 60836004,61006070,and 61076025)
文摘Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is studied.Based on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET increases.The impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge collection.Thus reducing the wafer thickness could mitigate the SET effect for FinFET technology.
文摘Infineon公司的IMBF170R1K0M1是CoolSi^(TM)C1700V SiC Trench MOSFET,采用TO-2637L表面安装器件(SMD)封装,漏极和源极的爬电距离大约为7mm,这样安全标准很容易满足.单独驱动器的源引脚有助于降低栅极回路寄生电感,以避免栅极激振效应.器件最适合用在反激拓扑,12V/0V栅源极电压和大多数的反激控制器兼容,具有非常低的开关损耗,完全可控制d V/dt以适宜EMI优化.
