Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic prope...Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.展开更多
螺旋波等离子体源以其高电离效率与高密度优势受到多个领域的青睐。螺旋波放电高电离效率的机理或者功率耦合模式,一直是困扰该领域学者的难点之一,对于放电过程与特性的诊断则是揭示其物理机制的重要途径。光谱诊断能够克服介入式诊断...螺旋波等离子体源以其高电离效率与高密度优势受到多个领域的青睐。螺旋波放电高电离效率的机理或者功率耦合模式,一直是困扰该领域学者的难点之一,对于放电过程与特性的诊断则是揭示其物理机制的重要途径。光谱诊断能够克服介入式诊断手段对等离子体的干扰同时受等离子体烧蚀等弊端,且响应速度快、操作灵活。为研究螺旋波等离子体的放电特性以及气体压力的影响,开展了以氩气为工质气体的光谱实验研究,并针对实验开展了Helic程序数值模拟。通过改变光纤探头焦距调整径向诊断位置,得到谱线强度的径向分布。由氩原子4p-4s能级跃迁产生的谱线主要集中在740~920 nm区间,谱线相对强度较离子激发谱线较强。实验研究发现,在较低氩气压力范围(0.2 Pa< P Ar <1.0 Pa),随着压力增加,放电光强迅速增加,但是当压力增加到大于1.0 Pa之后,光强增长的趋势变缓,甚至部分谱线的相对强度不再增长,达到类饱和状态,朗缪尔探针测量得到离子密度变化趋势与其相似。光强分布在靠近径向边界处( r ≈4 cm)存在凸起,且随压力增加,该凸起分布更为明显。通过对电子温度的计算发现,压力增加到一定程度将影响放电均匀性。仿真结果显示,增大压力,功率沉积密度的径向分布逐渐向径向边界处积累,与实验观察到的谱线强度径向凸起相一致,螺旋波与TG波的耦合效率增加。随着气体压力的增加,Er的径向边界峰值降低,原因是波所受阻尼增强, TG波被有效地局限于径向较窄的边界处。电流密度轴向分量Jz在等离子体内部和边界处的峰值呈显著的减小趋势,可见,虽然压力增加一定程度上提高了等离子体密度,但却相应的减小了电离率,导致轴向电流密度受限。但是径向电流密度Jr却呈现先减小后增大的趋势,且增长幅度明显,综合来看,放电效率有所提高。可见适当增加气�展开更多
基金supported by the National Natural Science Foundation of China(No.11504436)the Natural Science Foundation of Hubei Province(No.2015CFB364)the Fundamental Research Funds for the Central Universities(Nos.CZW14019 and CZW15045)
文摘Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.
文摘螺旋波等离子体源以其高电离效率与高密度优势受到多个领域的青睐。螺旋波放电高电离效率的机理或者功率耦合模式,一直是困扰该领域学者的难点之一,对于放电过程与特性的诊断则是揭示其物理机制的重要途径。光谱诊断能够克服介入式诊断手段对等离子体的干扰同时受等离子体烧蚀等弊端,且响应速度快、操作灵活。为研究螺旋波等离子体的放电特性以及气体压力的影响,开展了以氩气为工质气体的光谱实验研究,并针对实验开展了Helic程序数值模拟。通过改变光纤探头焦距调整径向诊断位置,得到谱线强度的径向分布。由氩原子4p-4s能级跃迁产生的谱线主要集中在740~920 nm区间,谱线相对强度较离子激发谱线较强。实验研究发现,在较低氩气压力范围(0.2 Pa< P Ar <1.0 Pa),随着压力增加,放电光强迅速增加,但是当压力增加到大于1.0 Pa之后,光强增长的趋势变缓,甚至部分谱线的相对强度不再增长,达到类饱和状态,朗缪尔探针测量得到离子密度变化趋势与其相似。光强分布在靠近径向边界处( r ≈4 cm)存在凸起,且随压力增加,该凸起分布更为明显。通过对电子温度的计算发现,压力增加到一定程度将影响放电均匀性。仿真结果显示,增大压力,功率沉积密度的径向分布逐渐向径向边界处积累,与实验观察到的谱线强度径向凸起相一致,螺旋波与TG波的耦合效率增加。随着气体压力的增加,Er的径向边界峰值降低,原因是波所受阻尼增强, TG波被有效地局限于径向较窄的边界处。电流密度轴向分量Jz在等离子体内部和边界处的峰值呈显著的减小趋势,可见,虽然压力增加一定程度上提高了等离子体密度,但却相应的减小了电离率,导致轴向电流密度受限。但是径向电流密度Jr却呈现先减小后增大的趋势,且增长幅度明显,综合来看,放电效率有所提高。可见适当增加气�
