The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices.Here,based on first-principles calculations,a strong magnetoelectric effect is ...The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices.Here,based on first-principles calculations,a strong magnetoelectric effect is proposed to effectively switch on/off the magnetic states as well as alter the in-plane/perpendicular easy axes of metal-phthalocyanine molecules(MPc)by reversing the electric polarization of the underlying two-dimensional(2D)ferroelectric a-In2Se3 substrate with the application of an external electric field.The mechanism originates from the different hybridization between the molecule and the ferroelectric substrate in which the different electronic states of surface Se layer play a dominant role.Moreover,the magnetic moments and magnetic anisotropy energies(MAE)of OsPc/In2Se3 can be further largely enhanced by a functionalized atom atop the OsPc molecule.The I-OsPc/In2Se3 system possesses large MAE up to 30 meV at both polarization directions,which is sufficient for room-temperature applications.These findings provide a feasible scheme to realize ferroelectric control of magnetic states in 2D limit,which have great potential for applications in nanoscale electronics and spintronics.展开更多
With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance param...With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.展开更多
基金supported by the National Natural Science Foundation of China(11974307,61574123,11674299,and 11634011)National Key Research and Development Program of China(2017YFA0204904)+3 种基金Fundamental Research Funds for the Central Universities(2019FZA3004,WK2340000082,and WK2060190084)Zhejiang Provincial Natural Science Foundation(D19A040001)Anhui Initiative in Quantum Information Technologies(AHY170000)Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)。
文摘The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices.Here,based on first-principles calculations,a strong magnetoelectric effect is proposed to effectively switch on/off the magnetic states as well as alter the in-plane/perpendicular easy axes of metal-phthalocyanine molecules(MPc)by reversing the electric polarization of the underlying two-dimensional(2D)ferroelectric a-In2Se3 substrate with the application of an external electric field.The mechanism originates from the different hybridization between the molecule and the ferroelectric substrate in which the different electronic states of surface Se layer play a dominant role.Moreover,the magnetic moments and magnetic anisotropy energies(MAE)of OsPc/In2Se3 can be further largely enhanced by a functionalized atom atop the OsPc molecule.The I-OsPc/In2Se3 system possesses large MAE up to 30 meV at both polarization directions,which is sufficient for room-temperature applications.These findings provide a feasible scheme to realize ferroelectric control of magnetic states in 2D limit,which have great potential for applications in nanoscale electronics and spintronics.
文摘With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.
