Y2000-62096-227 0010753静态 RAM 的制作从体硅到空间耗尽型绝缘体上硅=Converting a SRAM from bulk Si to partially depletedSOI[会,英]/Wood,M.& Smith,G.//Proceedings ofthe IEEE 1999 Custom Integrated Circuits Confer-en...Y2000-62096-227 0010753静态 RAM 的制作从体硅到空间耗尽型绝缘体上硅=Converting a SRAM from bulk Si to partially depletedSOI[会,英]/Wood,M.& Smith,G.//Proceedings ofthe IEEE 1999 Custom Integrated Circuits Confer-ence.—227～230(UC)展开更多
文摘Y2000-62096-227 0010753静态 RAM 的制作从体硅到空间耗尽型绝缘体上硅=Converting a SRAM from bulk Si to partially depletedSOI[会,英]/Wood,M.& Smith,G.//Proceedings ofthe IEEE 1999 Custom Integrated Circuits Confer-ence.—227～230(UC)
