Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteri...Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.展开更多
A simple solution processing method was de- veloped to grow large-scale well-aligned single crystals in- cluding 6,13-bis（triisopropylsilylethynyl）pentacene （TIPS- pentacene）, anthracene, tetracene, perylene, C6o ...A simple solution processing method was de- veloped to grow large-scale well-aligned single crystals in- cluding 6,13-bis（triisopropylsilylethynyl）pentacene （TIPS- pentacene）, anthracene, tetracene, perylene, C6o and tetra- cyanoquinodimethane. As pinned by a solid needle, a droplet of semiconductor solution dried into single-crystal arrays on a 1 cm×2 cm substrate. TIPS-pentacene was used to demonstrate the fabrication of hundreds of field- effect transistors （FETs） with the hole mobility as high as 6.46 cm^2 V^-1.s^-1. As such, this work provides a high- throughput, yet efficient approach for statistical examination on the FET performance of organic single crystals.展开更多
基金supported by the Fundamental Research Funds for the Central Universities(buctrc202103 and buctrc202128)the National Natural Science Foundation of China(52103200,22171019,21975263 and 52273167)+4 种基金SINOPEC(222131)the Open Funds of the State Key Laboratory of Optoelectronic Materials and Technologies(Sun Yat-sen University)the State Key Laboratory of Fine Chemicals(KF2201,Dalian University of Technology)the State Key Laboratory of Luminescent Materials and Devices(2022-skllmd-14)the State Key Laboratory of Supramolecular Structure and Materials(SKLSSM2022036)。
基金supported by the National Natural Science Foundation of China (No.60676051)the Natural Science Foundation of Tianjin(No.07JCYBJC12700)the Fund of the Key Discipline of Material Physics and Chemistry of Tianjin
文摘Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,respectively.The fabricated OFETs exhibit reasonable device characteristics.The field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with PI.Furthermore,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.
基金This work was supported by the National Basic Research Program of China （2014CB643503）, the National Natural Science Foundation of China （51222302, 51373150, 51461165301 ）, Zhejiang Provincial Natural Science Foundation （LZI3E030002） and Fundamental Research Funds for the Central Universities. Huolin L. Xin is supported by the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the 0ffice of Basic Energy Sciences, United States Department of Energy （DE-SC0012704）.
文摘A simple solution processing method was de- veloped to grow large-scale well-aligned single crystals in- cluding 6,13-bis（triisopropylsilylethynyl）pentacene （TIPS- pentacene）, anthracene, tetracene, perylene, C6o and tetra- cyanoquinodimethane. As pinned by a solid needle, a droplet of semiconductor solution dried into single-crystal arrays on a 1 cm×2 cm substrate. TIPS-pentacene was used to demonstrate the fabrication of hundreds of field- effect transistors （FETs） with the hole mobility as high as 6.46 cm^2 V^-1.s^-1. As such, this work provides a high- throughput, yet efficient approach for statistical examination on the FET performance of organic single crystals.
