ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The p...ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.展开更多
本文提出一种新型偏置结构的毫米波固体源—短柱耦合结构.该结构的特点是便于调试,适应于参般离散性较大的负阻器件.运用谐振腔理论解释了该结构同通常的拉耦合结构相比具有较好的克服横向同轴谐振干扰能力.在 ka 波段对机调和电调源的...本文提出一种新型偏置结构的毫米波固体源—短柱耦合结构.该结构的特点是便于调试,适应于参般离散性较大的负阻器件.运用谐振腔理论解释了该结构同通常的拉耦合结构相比具有较好的克服横向同轴谐振干扰能力.在 ka 波段对机调和电调源的实际调试获取较宽的调谐特性.展开更多
文摘ZnO films with c -axis parallel to the substrate are reported.ZnO films are synthesized by solid-source chemical vapor deposition,a novel CVD technique,using zinc acetate dihydrate (solid) as the source material.The properties are characterized by X-ray diffraction,atomic force microscopy and transmission spectra.The parallel oriented ZnO films with mixed orientation for (100) and (110) planes are achieved on glass at the substrate temperature of 200℃ and the source temperature of 280℃,and a qualitative explanation is given for the forming of the mixed orientation.AFM images show that the surface is somewhat rough for the parallel oriented ZnO films.The transmission spectrum exhibits a high transmittance of about 85% in the visible region and shows an optical band gap about 3.25eV at room temperature.
