This paper takes full advantages of the I-V transconductance characteristics of metal-oxide semiconductor field effect transistor （MOSFET） operating in the subthreshold region and the enhancement pre-regulator techn...This paper takes full advantages of the I-V transconductance characteristics of metal-oxide semiconductor field effect transistor （MOSFET） operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor （CMOS） logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient （TC） of 2.5×10^-4μA/℃ in the temperature range of-40 to 150℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about - 126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.展开更多
A method was developed to solve the combined system of the current field and the circuit. The ＂super-node＂ was used to transform the matrix for conventional nodal analyses of a circuit system from non-positive defin...A method was developed to solve the combined system of the current field and the circuit. The ＂super-node＂ was used to transform the matrix for conventional nodal analyses of a circuit system from non-positive definite to positive definite. Then, a positive definite matrix for the overall system was obtained by combining the matrix from the circuit nodal analysis method and the matrix resulted from finite element method （FEM） formulation to solve the FEM fields. This approach has been successfully applied to simulate the electrical potential and current distributions on each metal layer of printed circuit boards （PCBs） and integrated circuit （IC） packages for a given power supply. The simulation results can then be used to analyze the properties of the PCBs and IC packages such as the port resistances and IR drops. The results can also be used to optimize PCB and IC package designs, such as by adjusting the power/ground distribution networks.展开更多
基金Supported by the National Natural Science Foundation of China (60376019)
文摘This paper takes full advantages of the I-V transconductance characteristics of metal-oxide semiconductor field effect transistor （MOSFET） operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor （CMOS） logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient （TC） of 2.5×10^-4μA/℃ in the temperature range of-40 to 150℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about - 126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.
文摘A method was developed to solve the combined system of the current field and the circuit. The ＂super-node＂ was used to transform the matrix for conventional nodal analyses of a circuit system from non-positive definite to positive definite. Then, a positive definite matrix for the overall system was obtained by combining the matrix from the circuit nodal analysis method and the matrix resulted from finite element method （FEM） formulation to solve the FEM fields. This approach has been successfully applied to simulate the electrical potential and current distributions on each metal layer of printed circuit boards （PCBs） and integrated circuit （IC） packages for a given power supply. The simulation results can then be used to analyze the properties of the PCBs and IC packages such as the port resistances and IR drops. The results can also be used to optimize PCB and IC package designs, such as by adjusting the power/ground distribution networks.
