In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then...In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then,the effects ofβ-Ga_(2)O_(3) annealing on both its material character-istics and the device photoconductivity were studied.Theβ-Ga_(2)O_(3) thin films were annealed at 800,900,1000,and 1100°C,respectively.Moreover,the annealing time was fixed at 2 h,and the annealing ambients were oxygen,nitro-gen,and vacuum(4.9×10^(-4 )Pa),respectively.The crys-talline quality and texture of theβ-Ga_(2)O_(3) thin films before and after annealing were investigated by X-ray diffraction(XRD),showing that higher annealing temperature can result in a weaker intensity of(402)diffraction peak and a lower device photoresponsivity.Furthermore,the vacuum-annealed sam-ple exhibits the highest photoresponsivity compared with the oxygen-and nitrogen-annealed samples at the same annealing temperature.In addition,the persistent photoconductivity effect is effectively restrained in the oxygen-annealed sample even with the lowest photoresponsivity.展开更多
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_...Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.展开更多
基金the National Natural Science Foundation of China(No.61223002)the Research Foundation for the Doctoral Program of Higher Education of China(No.2012018530003)。
文摘In this work,metal–semiconductor–metal solar-blind ultraviolet photoconductors were fabricated based on theβ-Ga_(2)O_(3) thin films which were grown on the c-plane sapphire substrates by molecular beam epitaxy.Then,the effects ofβ-Ga_(2)O_(3) annealing on both its material character-istics and the device photoconductivity were studied.Theβ-Ga_(2)O_(3) thin films were annealed at 800,900,1000,and 1100°C,respectively.Moreover,the annealing time was fixed at 2 h,and the annealing ambients were oxygen,nitro-gen,and vacuum(4.9×10^(-4 )Pa),respectively.The crys-talline quality and texture of theβ-Ga_(2)O_(3) thin films before and after annealing were investigated by X-ray diffraction(XRD),showing that higher annealing temperature can result in a weaker intensity of(402)diffraction peak and a lower device photoresponsivity.Furthermore,the vacuum-annealed sam-ple exhibits the highest photoresponsivity compared with the oxygen-and nitrogen-annealed samples at the same annealing temperature.In addition,the persistent photoconductivity effect is effectively restrained in the oxygen-annealed sample even with the lowest photoresponsivity.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,51572241,61774019,61704153,and 11404029)the Fund of State Key Laboratory of IPOC(BUPT)+1 种基金the Open Fund of IPOC(BUPT)Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
