The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results s...The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis.展开更多
Auger electron emitting radionuclides have potential for the therapy of small-size cancers because of their high level of cytotoxicity, low-energy, high linear energy transfer, and short range biologic effectiveness. ...Auger electron emitting radionuclides have potential for the therapy of small-size cancers because of their high level of cytotoxicity, low-energy, high linear energy transfer, and short range biologic effectiveness. Auger emitter 165Er (T1/2 = 10.3 h, IEC = 100%) is a potent nuclide for targeted radionuclide therapy. 165Er excitation function via 165Ho(p,n)165Er, 165Ho(d,2n)165Er, 166Er(p,2n)165Tm→165Er, 166Er(d,3n)165Tm→165Er, natEr(p,xn)165Tm→165Er and 164Er(d,n)165Tm→165Er reactions were calculated by ALICE/91, ALICE/ASH (GDH Model & Hybrid Model) and TALYS-1.2 (Equilibrium & Pre-Equilibrium) codes and compared to existing data. Requisite for optimal thicknesses of targets were obtained by SRIM code for each reaction.展开更多
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relat...Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.展开更多
Calculations of energies and absolute intensities of Auger electron and X-ray arising from electron cap- ture are introduced briefly. The calculation codes and main process are also presented. The application is also ...Calculations of energies and absolute intensities of Auger electron and X-ray arising from electron cap- ture are introduced briefly. The calculation codes and main process are also presented. The application is also given by taking 55Fe ε decay as an example.展开更多
文摘The properties of the carbon contaminated silicon epitaxial layer and its surface have been studied by means of JAMP-10 Auger electron microprobe and JEM-2000FX transmission scanning electron microscope. The results show that the fog defects on the surface are due to carbon contamination. The existence of SiC in the silicon epitaxial layer has been identified by the electron diffraction analysis.
文摘Auger electron emitting radionuclides have potential for the therapy of small-size cancers because of their high level of cytotoxicity, low-energy, high linear energy transfer, and short range biologic effectiveness. Auger emitter 165Er (T1/2 = 10.3 h, IEC = 100%) is a potent nuclide for targeted radionuclide therapy. 165Er excitation function via 165Ho(p,n)165Er, 165Ho(d,2n)165Er, 166Er(p,2n)165Tm→165Er, 166Er(d,3n)165Tm→165Er, natEr(p,xn)165Tm→165Er and 164Er(d,n)165Tm→165Er reactions were calculated by ALICE/91, ALICE/ASH (GDH Model & Hybrid Model) and TALYS-1.2 (Equilibrium & Pre-Equilibrium) codes and compared to existing data. Requisite for optimal thicknesses of targets were obtained by SRIM code for each reaction.
文摘Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electron analysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth kinetics at the heterojunction interface. The comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it also has been demonstrated that the wafer surface morphology changes with the compositional gradation in a certain relationship.
文摘Calculations of energies and absolute intensities of Auger electron and X-ray arising from electron cap- ture are introduced briefly. The calculation codes and main process are also presented. The application is also given by taking 55Fe ε decay as an example.
