By means of density functional theory computations, we predicted two novel two-dimensional （2D） nanolnaterials, namely P2X （X=C, Si） monolayers with pentagonal configurations. Their structures, stabilities, intrin...By means of density functional theory computations, we predicted two novel two-dimensional （2D） nanolnaterials, namely P2X （X=C, Si） monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the elec- tronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps （2.76 eV and 2.69 eV, respectively） which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and excep- tional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.展开更多
Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconduc...Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems.展开更多
文摘By means of density functional theory computations, we predicted two novel two-dimensional （2D） nanolnaterials, namely P2X （X=C, Si） monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the elec- tronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps （2.76 eV and 2.69 eV, respectively） which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and excep- tional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.
文摘Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems.
基金supported by the National Key R&D Program of China(2022YFB3605400)the State Key Research and Development Project of Guangdong(2020B010174002)the National Natural Science Foundation of China(62234007,U21A20503 and U21A2071).
