Microcombs are revolutionizing optoelectronics by providing parallel, mutually coherent wavelengthchannels for time-frequency metrology and information processing. To implement this essential function inintegrated pho...Microcombs are revolutionizing optoelectronics by providing parallel, mutually coherent wavelengthchannels for time-frequency metrology and information processing. To implement this essential function inintegrated photonic systems, it is desirable to drive microcombs directly with an on-chip laser in a simpleand flexible way. However, two major difficulties have prevented this goal: (1) generating mode-lockedcomb states usually requires a significant amount of pump power and (2) the requirement to align laser andresonator frequency significantly complicates operation and limits the tunability of the comb lines. Here, weaddress these problems by using microresonators on an AlGaAs on-insulator platform to generate dark-pulsemicrocombs. This highly nonlinear platform dramatically relaxes fabrication requirements and leads to arecord-low pump power of <1 mW for coherent comb generation. Dark-pulse microcombs facilitated bythermally controlled avoided mode crossings are accessed by direct distributed feedback laser pumping.Without any feedback or control circuitries, the comb shows good coherence and stability. With around150 mW on-chip power, this approach also leads to an unprecedentedly wide tuning range of over one freespectral range (97.5 GHz). Our work provides a route to realize power-efficient, simple, and reconfigurablemicrocombs that can be seamlessly integrated with a wide range of photonic systems.展开更多
Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater o...Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.展开更多
This paper has developed and characterized a method to produce a velocity-tunable ^87Rb cold atomic source for atomic interferometry application. Using a high speed fluorescence imaging technology, it reports that the...This paper has developed and characterized a method to produce a velocity-tunable ^87Rb cold atomic source for atomic interferometry application. Using a high speed fluorescence imaging technology, it reports that the dynamic process of the atomic source formation is observed and the source performances including the flux and the initial velocity are characterized. A tunable atomic source with the initial velocity of 1.4-2.6 m/s and the atomic source flux of 2× 10^8 - 6 × 10^9 atoms/s has been obtained with the built experimental setup.展开更多
文摘Microcombs are revolutionizing optoelectronics by providing parallel, mutually coherent wavelengthchannels for time-frequency metrology and information processing. To implement this essential function inintegrated photonic systems, it is desirable to drive microcombs directly with an on-chip laser in a simpleand flexible way. However, two major difficulties have prevented this goal: (1) generating mode-lockedcomb states usually requires a significant amount of pump power and (2) the requirement to align laser andresonator frequency significantly complicates operation and limits the tunability of the comb lines. Here, weaddress these problems by using microresonators on an AlGaAs on-insulator platform to generate dark-pulsemicrocombs. This highly nonlinear platform dramatically relaxes fabrication requirements and leads to arecord-low pump power of <1 mW for coherent comb generation. Dark-pulse microcombs facilitated bythermally controlled avoided mode crossings are accessed by direct distributed feedback laser pumping.Without any feedback or control circuitries, the comb shows good coherence and stability. With around150 mW on-chip power, this approach also leads to an unprecedentedly wide tuning range of over one freespectral range (97.5 GHz). Our work provides a route to realize power-efficient, simple, and reconfigurablemicrocombs that can be seamlessly integrated with a wide range of photonic systems.
基金the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20210593)the Foundation of Jiangsu Provincial Double Innovation Doctor Program (Grant No. 30644)+2 种基金the National Natural Science Foundation of China (Grant No. 62204127)State Key Laboratory of Luminescence and Applications (Grant No. SKLA 202104)open research fund of Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education)。
文摘Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
基金supported in part by National Natural Science Foundation of China (Grant No 50775127/E0525)National Basic Research Specialized Program of China (Grant No 2007CB306504)
文摘This paper has developed and characterized a method to produce a velocity-tunable ^87Rb cold atomic source for atomic interferometry application. Using a high speed fluorescence imaging technology, it reports that the dynamic process of the atomic source formation is observed and the source performances including the flux and the initial velocity are characterized. A tunable atomic source with the initial velocity of 1.4-2.6 m/s and the atomic source flux of 2× 10^8 - 6 × 10^9 atoms/s has been obtained with the built experimental setup.
