Anomalous long-time increase of the diffraction efficiency is observed in dark-decay experiments of photorefractive gratings in Ce：BaTiO3. It is deduced that a phase-conjugate beam is induced by the writing beam at a...Anomalous long-time increase of the diffraction efficiency is observed in dark-decay experiments of photorefractive gratings in Ce：BaTiO3. It is deduced that a phase-conjugate beam is induced by the writing beam at acute angle to the ＋c axis of the crystal and it interferes with the other writing beam to form a second grating which is perpendicular to the first grating formed by the interference between two writing beams. The rising behaviour of the diffraction efficiency results from the different decay rates of these two photorefractive gratings. Furthermore, a simplified model of two gratings, both induced by two deep traps, is proposed to account for this phenomenon and the fitting results agree well with the experimental results.展开更多
High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to ...High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.展开更多
The uniformity of threshold voltage and threshold current in the In2 Se3 nanowire-based phase change memory （PCM） devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap d...The uniformity of threshold voltage and threshold current in the In2 Se3 nanowire-based phase change memory （PCM） devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60078002）,
文摘Anomalous long-time increase of the diffraction efficiency is observed in dark-decay experiments of photorefractive gratings in Ce：BaTiO3. It is deduced that a phase-conjugate beam is induced by the writing beam at acute angle to the ＋c axis of the crystal and it interferes with the other writing beam to form a second grating which is perpendicular to the first grating formed by the interference between two writing beams. The rising behaviour of the diffraction efficiency results from the different decay rates of these two photorefractive gratings. Furthermore, a simplified model of two gratings, both induced by two deep traps, is proposed to account for this phenomenon and the fitting results agree well with the experimental results.
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences
文摘High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.
基金supported by the National Basic Research Program of China(Grant No.2011CBA00604)
文摘The uniformity of threshold voltage and threshold current in the In2 Se3 nanowire-based phase change memory （PCM） devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.
