Utilizing solar energy for sorbent regeneration during the CO_(2)swing adsorption process could potentially reduce CO_(2)capture costs.This study describes a new technique—solar thermal swing adsorption(STSA)for CO_(...Utilizing solar energy for sorbent regeneration during the CO_(2)swing adsorption process could potentially reduce CO_(2)capture costs.This study describes a new technique—solar thermal swing adsorption(STSA)for CO_(2)capture based on application of intermittent illumination onto porous carbon monolith(PCM)sorbents during the CO_(2)capture process.This allows CO_(2)to be selectively adsorbed on the sorbents during the light-off periods and thereafter released during the light-on periods due to the solar thermal effect.The freestanding and mechanically strong PCMs have rich ultramicropores with narrow pore size distributions,displaying relatively high CO_(2)adsorption capacity and high CO_(2)/N_(2) selectivity.Given the high CO_(2)capture performance,high solar thermal conversion efficiency,and high thermal conductivity,the PCM sorbents could achieve high CO_(2)capture rate of up to 0.226 kg·kgcarbon^(-1)·h^(-1)from a gas mixture of 20 vol.%CO_(2)/80 vol.%N_(2) under STSA conditions with a light intensity of 1000 W·m^(-2).In addition,the combination of STSA with the conventional vacuum swing adsorption technique further increases the CO_(2)working capacity.展开更多
In this study,we fabricate Si/SiGe core-shell Junctionless accumulation mode(JAM)FinFET devices through a rapid and novel process with four main steps,i.e.e-beam lithography definition,sputter deposition,alloy combina...In this study,we fabricate Si/SiGe core-shell Junctionless accumulation mode(JAM)FinFET devices through a rapid and novel process with four main steps,i.e.e-beam lithography definition,sputter deposition,alloy combination annealing,and chemical solution etching.The height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm.After finishing the fabrication of devices,we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch.A poly-Si/SiGe core-shell JAMFETs was successfully demonstrated and it also exhibits a superior subthreshold swing of 81mV/dec and high on/off ratio>10^5 when annealing for 1hr at 600℃.The thermal diffusion process condition for this study are 1hr at 600℃ and 6hr at 700℃ for comparison.The annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the other.Results suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin film.Annealing JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart i.e.at higher temperature.This new process can still fabricate a comparable performance to classical planar FinFET in driving current.展开更多
基金This study was supported byÅForsk research grant and Anhui Provincial Natural Science Foundation(No.2108085QB72)。
文摘Utilizing solar energy for sorbent regeneration during the CO_(2)swing adsorption process could potentially reduce CO_(2)capture costs.This study describes a new technique—solar thermal swing adsorption(STSA)for CO_(2)capture based on application of intermittent illumination onto porous carbon monolith(PCM)sorbents during the CO_(2)capture process.This allows CO_(2)to be selectively adsorbed on the sorbents during the light-off periods and thereafter released during the light-on periods due to the solar thermal effect.The freestanding and mechanically strong PCMs have rich ultramicropores with narrow pore size distributions,displaying relatively high CO_(2)adsorption capacity and high CO_(2)/N_(2) selectivity.Given the high CO_(2)capture performance,high solar thermal conversion efficiency,and high thermal conductivity,the PCM sorbents could achieve high CO_(2)capture rate of up to 0.226 kg·kgcarbon^(-1)·h^(-1)from a gas mixture of 20 vol.%CO_(2)/80 vol.%N_(2) under STSA conditions with a light intensity of 1000 W·m^(-2).In addition,the combination of STSA with the conventional vacuum swing adsorption technique further increases the CO_(2)working capacity.
文摘In this study,we fabricate Si/SiGe core-shell Junctionless accumulation mode(JAM)FinFET devices through a rapid and novel process with four main steps,i.e.e-beam lithography definition,sputter deposition,alloy combination annealing,and chemical solution etching.The height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm.After finishing the fabrication of devices,we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch.A poly-Si/SiGe core-shell JAMFETs was successfully demonstrated and it also exhibits a superior subthreshold swing of 81mV/dec and high on/off ratio>10^5 when annealing for 1hr at 600℃.The thermal diffusion process condition for this study are 1hr at 600℃ and 6hr at 700℃ for comparison.The annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the other.Results suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin film.Annealing JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart i.e.at higher temperature.This new process can still fabricate a comparable performance to classical planar FinFET in driving current.
