Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage memory.However,high program voltage induced substanti...Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage memory.However,high program voltage induced substantial energy consumption,which is one of the primary concerns,hinders their applications in lowenergy-consumption artificial synapses for neuromorphic computing.In this study,we demonstrate a three-terminal floating gate device based on the vdWH of tin disulfide(SnS2),hexagonal boron nitride(h-BN),and few-layer graphene.The large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole-injection barrier across h-BN.Our floating gate device,as a nonvolatile multilevel electronic memory,exhibits large on/off current ratio(105),good retention(over 104 s),and robust endurance(over 1000 cycles).Moreover,it can function as an artificial synapse to emulate basic synaptic functions.Further,low energy consumption down to7 picojoule(pJ)can be achieved owing to the small program voltage.High linearity(<1)and conductance ratio(80)in long-term potentiation and depression(LTP/LTD)further contribute to the high pattern recognition accuracy(90%)in artificial neural network simulation.The proposed device with attentive band engineering can promote the future development of energy-efficient memory and neuromorphic devices.展开更多
A deceptive pull-off jamming method to terminal guidance radar is put forward in this paper.The design rules about the important jamming parameters are discussed in detail,including the number of the decoy targets in ...A deceptive pull-off jamming method to terminal guidance radar is put forward in this paper.The design rules about the important jamming parameters are discussed in detail,including the number of the decoy targets in range dimension,the velocity of the range gate pull-off,and the number of the decoy targets in velocity dimension and the velocity of the Doppler frequency pull-off.Also,the steps to design these parameters are brought out.The rules and design procedure discussed in this paper have important meaning for the choice of the reasonable jamming parameters in the practical applications,which can help to obtain good jamming effect.展开更多
基金National Natural Science Foundation of China,Grant/Award Numbers:U2032147,21872100Singapore MOE Grant,Grant/Award Number:MOE-2019-T2-1-002the Science and Engineering Research Council of A*STAR(Agency for Science,Technology and Research)Singapore,Grant/Award Number:A20G9b0135。
文摘Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage memory.However,high program voltage induced substantial energy consumption,which is one of the primary concerns,hinders their applications in lowenergy-consumption artificial synapses for neuromorphic computing.In this study,we demonstrate a three-terminal floating gate device based on the vdWH of tin disulfide(SnS2),hexagonal boron nitride(h-BN),and few-layer graphene.The large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole-injection barrier across h-BN.Our floating gate device,as a nonvolatile multilevel electronic memory,exhibits large on/off current ratio(105),good retention(over 104 s),and robust endurance(over 1000 cycles).Moreover,it can function as an artificial synapse to emulate basic synaptic functions.Further,low energy consumption down to7 picojoule(pJ)can be achieved owing to the small program voltage.High linearity(<1)and conductance ratio(80)in long-term potentiation and depression(LTP/LTD)further contribute to the high pattern recognition accuracy(90%)in artificial neural network simulation.The proposed device with attentive band engineering can promote the future development of energy-efficient memory and neuromorphic devices.
基金Sponsored by National Basic Research Program of China (6139001012)
文摘A deceptive pull-off jamming method to terminal guidance radar is put forward in this paper.The design rules about the important jamming parameters are discussed in detail,including the number of the decoy targets in range dimension,the velocity of the range gate pull-off,and the number of the decoy targets in velocity dimension and the velocity of the Doppler frequency pull-off.Also,the steps to design these parameters are brought out.The rules and design procedure discussed in this paper have important meaning for the choice of the reasonable jamming parameters in the practical applications,which can help to obtain good jamming effect.
