Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration densi...Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations.展开更多
大量研究表明,神经元的突触可塑性包括功能可塑性和结构可塑性,与学习和记忆密切相关.最近,在经过训练的动物海马区,记录到了学习诱导的长时程增强(long term potentiation,LTP),如果用激酶抑制剂阻断晚期LTP,就会使大鼠丧失训练形成的...大量研究表明,神经元的突触可塑性包括功能可塑性和结构可塑性,与学习和记忆密切相关.最近,在经过训练的动物海马区,记录到了学习诱导的长时程增强(long term potentiation,LTP),如果用激酶抑制剂阻断晚期LTP,就会使大鼠丧失训练形成的记忆.这些结果指出,LTP可能是形成记忆的分子基础.因此,进一步研究哺乳动物脑内突触可塑性的分子机制,对揭示学习和记忆的神经基础有重要意义.此外,在精神迟滞性疾病和神经退行性疾病患者脑内记录到异常的LTP,并发现神经元的树突棘数量减少,形态上产生畸变或萎缩,同时发现,产生突变的基因大多编码调节突触可塑性的信号通路蛋白,故突触可塑性研究也将促进精神和神经疾病的预防和治疗.综述了突触可塑性研究的最新进展,并展望了其发展前景.展开更多
基金National Research Foundation of Korea,Grant/Award Numbers:2020M3F3A2A02082436,2020R1A4A2002806,2021R1A2C2010026,2022M3F3A2A01072215Samsung Electronics Co.Ltd.,Grant/Award Number:IO201210-07994-01。
文摘Various core memory devices have been proposed for utilization in future inmemory computing technology featuring high energy efficiency.Flash memory is considered as a viable choice owing to its high integration density,stability,and reliability,which has been verified by commercialized products.However,its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in-memory computing applications difficult.In this paper,we introduce a dual-mode memory device named“ferro-floating memory”,fabricated using van der Waals(vdW)materials(h-BN,MoS2,andα-In2Se3).The vdW material,α-In2Se3,acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation.Compared to the tunnelingbased memory operation,the ferro-floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations,respectively.The dual-mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48%through achieving conductance variation regions.Furthermore,we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks'performance through various training/inference simulations.
文摘大量研究表明,神经元的突触可塑性包括功能可塑性和结构可塑性,与学习和记忆密切相关.最近,在经过训练的动物海马区,记录到了学习诱导的长时程增强(long term potentiation,LTP),如果用激酶抑制剂阻断晚期LTP,就会使大鼠丧失训练形成的记忆.这些结果指出,LTP可能是形成记忆的分子基础.因此,进一步研究哺乳动物脑内突触可塑性的分子机制,对揭示学习和记忆的神经基础有重要意义.此外,在精神迟滞性疾病和神经退行性疾病患者脑内记录到异常的LTP,并发现神经元的树突棘数量减少,形态上产生畸变或萎缩,同时发现,产生突变的基因大多编码调节突触可塑性的信号通路蛋白,故突触可塑性研究也将促进精神和神经疾病的预防和治疗.综述了突触可塑性研究的最新进展,并展望了其发展前景.
