Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra...Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.展开更多
基金supported by the National Key Research and Development Program(No.2016YFB0400500)the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。
文摘Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.
