A static frequency divider is presented using 0.7μm lnP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 ×0.65 mm^2. T...A static frequency divider is presented using 0.7μm lnP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 ×0.65 mm^2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.展开更多
A layout and connection optimization for static frequency divider is presented. The layout optimization provides a new circle topology transistors placement and reasonable connection structure, which reduces the paras...A layout and connection optimization for static frequency divider is presented. The layout optimization provides a new circle topology transistors placement and reasonable connection structure, which reduces the parasitic effectively and enables self-oscillation frequency enhancement. Besides, bandwidth enhancement techniques based on a center-tap capacitor in input balun design and inductive peaking in latch design are adopted to improve further high frequency performance with low power consumption. As a proof of concept, design of a divide-by-2 static frequency divider in 0.13 μm SiGe BiCMOS technology is reported. With single-ended input clock signal, the divider is measured to be operated from 40 to 90 GHz. Phase noise measurements of a 90 GHz input clock signal indicate ideal behavior with no measurable noise contribution from the divider. The divider followed by a buffer that can deliver more than-10 dBm output power, which is sufficient to drive succeeding stage. To the author's knowledge, the divider exhibits a competitive power dissipation and the highest FOM among silicon based frequency dividers that operating higher than 70 GHz.展开更多
Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performa...Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.展开更多
文摘A static frequency divider is presented using 0.7μm lnP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 ×0.65 mm^2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.
基金supported by National Natural Science Foundation of China under Grant 61701114the National Science and Technology Major Project under Grant 2017ZX03001020the Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811)
文摘A layout and connection optimization for static frequency divider is presented. The layout optimization provides a new circle topology transistors placement and reasonable connection structure, which reduces the parasitic effectively and enables self-oscillation frequency enhancement. Besides, bandwidth enhancement techniques based on a center-tap capacitor in input balun design and inductive peaking in latch design are adopted to improve further high frequency performance with low power consumption. As a proof of concept, design of a divide-by-2 static frequency divider in 0.13 μm SiGe BiCMOS technology is reported. With single-ended input clock signal, the divider is measured to be operated from 40 to 90 GHz. Phase noise measurements of a 90 GHz input clock signal indicate ideal behavior with no measurable noise contribution from the divider. The divider followed by a buffer that can deliver more than-10 dBm output power, which is sufficient to drive succeeding stage. To the author's knowledge, the divider exhibits a competitive power dissipation and the highest FOM among silicon based frequency dividers that operating higher than 70 GHz.
文摘Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.
