目的研究不同溅射功率对W-C:H涂层结构与摩擦学性能的影响。方法用非平衡磁控溅射(UBMS)+等离子体增强化学气相沉积法(PECVD),以WC靶作为溅射靶,C2H2为反应气体,通过调制溅射靶功率,在316不锈钢与Si(100)基体上制备了W-C:H系列薄膜。通...目的研究不同溅射功率对W-C:H涂层结构与摩擦学性能的影响。方法用非平衡磁控溅射(UBMS)+等离子体增强化学气相沉积法(PECVD),以WC靶作为溅射靶,C2H2为反应气体,通过调制溅射靶功率,在316不锈钢与Si(100)基体上制备了W-C:H系列薄膜。通过场发射电镜(FESEM)、X射线衍射仪(XRD)、拉曼光谱对薄膜的微观结构和成分进行了表征。用UMT-3MT多功能摩擦机对薄膜的摩擦学性能进行了分析。结果 W-C主要以β-WC1-x纳米晶的形式均匀分布在非晶碳中,并表现出(200)面择优生长。随着溅射靶功率的上升,薄膜内W含量逐渐升高,(200)面衍射峰逐渐增强,sp2含量先降低后升高。靶功率在1.4 k W时具有较好的摩擦学性能,摩擦系数为0.15,磨损率为3.92×10-7 mm^3/(N·m)。结论随着溅射靶功率逐渐升高,柱状晶逐渐变粗,涂层的致密性逐渐降低,薄膜摩擦学性能与WC含量密切相关。展开更多
High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate dista...High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate distance（Dt–s）（ranging from 8 to 20 cm） on phase structure, surface morphology, deposition rate, and corrosion resistance of vanadium films was investigated. The results show that the vanadium films are textured with a preferential orientation in the（111） direction except for that fabricated at 20 cm. With Dt–sincreasing, the intensity of（111） diffraction peak of the films decreases and there exists a proper distance leading to the minimum surface roughness of 0.65 nm. The deposition rate decreases with Dt–sincreasing. All the V-coated aluminum samples possess better corrosion resistance than the control sample. The sample fabricated at Dt–sof 12 cm demonstrates the best corrosion resistance with the corrosion potential increasing by 0.19 V and the corrosion current decreasing by an order of magnitude compared with that of the substrate. The samples gain further improvement in corrosion resistance after annealing, and if compared with that of annealed aluminum alloy, then the corrosion potential of the sample fabricated at 20 cm increases by 0.415 V and the corrosion current decreases by two orders of magnitude after annealed at 200 °C. If the annealing temperature further rises to 300 °C, then the corrosion resistance of samples increases less obviously than that of the control sample.展开更多
调制脉冲磁控溅射可通过改变强、弱离化阶段的脉冲强度和占空比等电场参量,大幅调控镀料粒子的离化率、沉积能量和数量,实现对沉积镀层形核与生长过程的精确把控。在非平衡闭合磁场条件下,采用调制脉冲磁控溅射技术,通过对其强离化脉冲...调制脉冲磁控溅射可通过改变强、弱离化阶段的脉冲强度和占空比等电场参量,大幅调控镀料粒子的离化率、沉积能量和数量,实现对沉积镀层形核与生长过程的精确把控。在非平衡闭合磁场条件下,采用调制脉冲磁控溅射技术,通过对其强离化脉冲阶段的脉冲宽度和靶功率进行调控获得持续增大的峰值靶功率密度,并在此条件下制备多组纯Ti镀层,对其微观形貌和力学性能进行了检测分析。结果表明,当强离化脉冲阶段的峰值靶功率密度由0.15 k W·cm^-2持续增大至0.86 k W·cm-2时,所制备的纯Ti镀层具有11 nm的平均晶粒尺寸,且较其他峰值靶功率密度条件下的制备镀层具有更为致密的组织结构、平整的表面质量(表面粗糙度Ra为11 nm)和良好的力学性能。展开更多
文摘目的研究不同溅射功率对W-C:H涂层结构与摩擦学性能的影响。方法用非平衡磁控溅射(UBMS)+等离子体增强化学气相沉积法(PECVD),以WC靶作为溅射靶,C2H2为反应气体,通过调制溅射靶功率,在316不锈钢与Si(100)基体上制备了W-C:H系列薄膜。通过场发射电镜(FESEM)、X射线衍射仪(XRD)、拉曼光谱对薄膜的微观结构和成分进行了表征。用UMT-3MT多功能摩擦机对薄膜的摩擦学性能进行了分析。结果 W-C主要以β-WC1-x纳米晶的形式均匀分布在非晶碳中,并表现出(200)面择优生长。随着溅射靶功率的上升,薄膜内W含量逐渐升高,(200)面衍射峰逐渐增强,sp2含量先降低后升高。靶功率在1.4 k W时具有较好的摩擦学性能,摩擦系数为0.15,磨损率为3.92×10-7 mm^3/(N·m)。结论随着溅射靶功率逐渐升高,柱状晶逐渐变粗,涂层的致密性逐渐降低,薄膜摩擦学性能与WC含量密切相关。
基金financially supported by the National Natural Science Foundation of China (Nos. 51175118 and U1330110)the Open Foundation of Science and Technology on Surface Physics and Chemistry Laboratory (No. SPC201104)
文摘High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate distance（Dt–s）（ranging from 8 to 20 cm） on phase structure, surface morphology, deposition rate, and corrosion resistance of vanadium films was investigated. The results show that the vanadium films are textured with a preferential orientation in the（111） direction except for that fabricated at 20 cm. With Dt–sincreasing, the intensity of（111） diffraction peak of the films decreases and there exists a proper distance leading to the minimum surface roughness of 0.65 nm. The deposition rate decreases with Dt–sincreasing. All the V-coated aluminum samples possess better corrosion resistance than the control sample. The sample fabricated at Dt–sof 12 cm demonstrates the best corrosion resistance with the corrosion potential increasing by 0.19 V and the corrosion current decreasing by an order of magnitude compared with that of the substrate. The samples gain further improvement in corrosion resistance after annealing, and if compared with that of annealed aluminum alloy, then the corrosion potential of the sample fabricated at 20 cm increases by 0.415 V and the corrosion current decreases by two orders of magnitude after annealed at 200 °C. If the annealing temperature further rises to 300 °C, then the corrosion resistance of samples increases less obviously than that of the control sample.
文摘调制脉冲磁控溅射可通过改变强、弱离化阶段的脉冲强度和占空比等电场参量,大幅调控镀料粒子的离化率、沉积能量和数量,实现对沉积镀层形核与生长过程的精确把控。在非平衡闭合磁场条件下,采用调制脉冲磁控溅射技术,通过对其强离化脉冲阶段的脉冲宽度和靶功率进行调控获得持续增大的峰值靶功率密度,并在此条件下制备多组纯Ti镀层,对其微观形貌和力学性能进行了检测分析。结果表明,当强离化脉冲阶段的峰值靶功率密度由0.15 k W·cm^-2持续增大至0.86 k W·cm-2时,所制备的纯Ti镀层具有11 nm的平均晶粒尺寸,且较其他峰值靶功率密度条件下的制备镀层具有更为致密的组织结构、平整的表面质量(表面粗糙度Ra为11 nm)和良好的力学性能。
