We study the thermoelectric transport through a double-quantum-dot system with spin-dependent interdot cou- pling and ferromagnetic electrodes by means of the non-equilibrium Green＇s function in the linear response r...We study the thermoelectric transport through a double-quantum-dot system with spin-dependent interdot cou- pling and ferromagnetic electrodes by means of the non-equilibrium Green＇s function in the linear response regime. It is found that the thermoelectric coefficients are strongly dependent on the splitting of the interdot coupling, the relative magnetic configurations, and the spin polarization of leads. In particular, the thermoelectric efficiency can reach a considerable value in the parallel configuration when the effective interdot coupling and the tunnel coupling between the quantum dots and the leads for the spin-down electrons are small. Moreover, the thermoelectric efficiency increases with the intradot Coulomb interaction increasing and can reach very high values at appropriate temperatures. In the presence of the magnetic field, the spin accumulation in the leads strongly suppresses the thermoelectric efficiency, and a pure spin thermopower can be obtained.展开更多
We calculate the decay constants of light and heavy-light pseudoscalar and vector mesons with improved soft-wall holographic wavefuntions, which take into account the effects of both quark masses and dynamical spins. ...We calculate the decay constants of light and heavy-light pseudoscalar and vector mesons with improved soft-wall holographic wavefuntions, which take into account the effects of both quark masses and dynamical spins. We find that the predicted decay constants, especially for the ratio fV/fP, based on light-front holographic QCD, can be significantly improved, once the dynamical spin effects are taken into account by introducing the helicity-dependent wavefunctions. We also perform detailed χ2 analyses for the holographic parameters （i.e. the mass-scale parameter κ and the quark masses）, by confronting our predictions with the data for the charged-meson decay constants and the meson spectra. The fitted values for these parameters are generally in agreement with those obtained by fitting to the Regge trajectories. At the same time, most of our results for the decay constants and their ratios agree with the data as well as the predictions based on lattice QCD and QCD sum rule approaches, with only a few exceptions observed.展开更多
Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5） （thickness unit：...Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5） （thickness unit： nm） were nano-fabricated on the Si（100）/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography （EBL） and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance （TMR ＆ R） versus driving current （I） loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ＋1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11274208,10974124,and 11004124)the Shanxi Natural Science Foundation,China (Grant No. 2009011001-1)
文摘We study the thermoelectric transport through a double-quantum-dot system with spin-dependent interdot cou- pling and ferromagnetic electrodes by means of the non-equilibrium Green＇s function in the linear response regime. It is found that the thermoelectric coefficients are strongly dependent on the splitting of the interdot coupling, the relative magnetic configurations, and the spin polarization of leads. In particular, the thermoelectric efficiency can reach a considerable value in the parallel configuration when the effective interdot coupling and the tunnel coupling between the quantum dots and the leads for the spin-down electrons are small. Moreover, the thermoelectric efficiency increases with the intradot Coulomb interaction increasing and can reach very high values at appropriate temperatures. In the presence of the magnetic field, the spin accumulation in the leads strongly suppresses the thermoelectric efficiency, and a pure spin thermopower can be obtained.
基金Supported by National Natural Science Foundation of China(11475055,11675061,11435003)Q.Chang is also supported by the Foundation for the Author of National Excellent Doctoral Dissertation of China(201317)+1 种基金the Program for Science and Technology Innovation Talents in Universities of Henan Province(14HASTIT036)the Excellent Youth Foundation of HNNU.X.L.is also supported in part by the self-determined research funds of CCNU from the colleges’basic research and operation of MOE(CCNU18TS029)
文摘We calculate the decay constants of light and heavy-light pseudoscalar and vector mesons with improved soft-wall holographic wavefuntions, which take into account the effects of both quark masses and dynamical spins. We find that the predicted decay constants, especially for the ratio fV/fP, based on light-front holographic QCD, can be significantly improved, once the dynamical spin effects are taken into account by introducing the helicity-dependent wavefunctions. We also perform detailed χ2 analyses for the holographic parameters （i.e. the mass-scale parameter κ and the quark masses）, by confronting our predictions with the data for the charged-meson decay constants and the meson spectra. The fitted values for these parameters are generally in agreement with those obtained by fitting to the Regge trajectories. At the same time, most of our results for the decay constants and their ratios agree with the data as well as the predictions based on lattice QCD and QCD sum rule approaches, with only a few exceptions observed.
基金the State Key Project of Fundamental Research of Ministry of Science and Technology （No. 2006CB932200） the National Natural Science Foundation of China （NSFC, No. 10574156）+2 种基金 the Knowledge Innovation Program of Chinese Aca.demy of Sciencesthe protial support of 0utstanding Young Researcher Foundation （Nos. 50325104 and 50528101） K.C.Wong Education Foundation, Hong Kong.
文摘Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5） （thickness unit： nm） were nano-fabricated on the Si（100）/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography （EBL） and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance （TMR ＆ R） versus driving current （I） loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ＋1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.
