A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic ...A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction(MTJ),ferromagnet(FM)-quantum dot(QD)/FM-FM,double barrier MTJ,FM-marginal Fermi liquid-FM,FM-unconventional superconductor-FM(FUSF),quantum ring and optical spin-field-effect transistor.The magnetoresistances in those structures,spin accumulation effect in FM-QD-FM and FUSF systems,spin injection and spin filter into semiconductor,spin transfer effect,photon-assisted spin transport,magnonassisted tunneling,electron-electron interaction effect on spin transport,laser-controlled spin dynamics,and thermoelectrical spin transport are discussed.展开更多
Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic （FM） monolayer and an FM/antiferromagnetic （AFM） bilayer under a stress field, respectively. It t...Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic （FM） monolayer and an FM/antiferromagnetic （AFM） bilayer under a stress field, respectively. It then investigates the magnetoresistance （MR） of the spin-valve structure, which is built by an FM rnonolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling （FM coupling or AFM coupling） between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.展开更多
Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it,...Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it, the necessary conditions, including boththermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems,including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor andsemiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were alsointroduced.展开更多
A GMR（giant magneto-resistive） spin valve sensor for magnetic recording has been designed in an attempt to solve the Barkhausen noise problem in small-sized GMR sensors.In this study,the GMR ratio of the top-pinned ...A GMR（giant magneto-resistive） spin valve sensor for magnetic recording has been designed in an attempt to solve the Barkhausen noise problem in small-sized GMR sensors.In this study,the GMR ratio of the top-pinned spin valve is optimized to a value of 13.2%.The free layer is magnetized perpendicular to the pinned layer by a CoCrPt permanent magnetic bias so that a linear magnetic field response can be obtained.An obvious improvement on performance is observed when the permanent magnetic bias is magnetized,while the GMR sensor has a steadier MR-H loop and a smaller coercive field.展开更多
A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum (electron-beam) evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co...A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum (electron-beam) evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co/Si/Co sandwiches and there was no magnetoresistance(MR) or spin-valve MR in them due to the high resistivity of Si spacer. While in Co/Si/(Co/Cu/Co) multilayers, we observed a spin-valve MR of about (0.5%) through a (nominal) 2.7nm Si spacer at room temperature. The spin-valve MR in Co/Si/(Co/Cu/Co) multilayers was attributed to the enhanced spin polarization of conduction electrons caused by the top Co/Cu/Co sandwich with GMR mechanism and high spin-dependent scattering at Co/Cu interface.展开更多
基金supported in part by the National Science Fund for Distinguished Young Scholars of China(Grant No. 10625419)the National Natural Science Foundation of China(Grant Nos. 90922033 and 10934008)+1 种基金the Ministry of Science and Technology of China (Grant Nos.2012CB932900 and 2013CB933401)the Chinese Academy of Sciences,China,the DFG and the state of Saxony-Anhalt,Germany
文摘A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction(MTJ),ferromagnet(FM)-quantum dot(QD)/FM-FM,double barrier MTJ,FM-marginal Fermi liquid-FM,FM-unconventional superconductor-FM(FUSF),quantum ring and optical spin-field-effect transistor.The magnetoresistances in those structures,spin accumulation effect in FM-QD-FM and FUSF systems,spin injection and spin filter into semiconductor,spin transfer effect,photon-assisted spin transport,magnonassisted tunneling,electron-electron interaction effect on spin transport,laser-controlled spin dynamics,and thermoelectrical spin transport are discussed.
基金Project supported by the National Natural Science Foundation of China (Grant No 10347118)Natural Science Foundation of College of Jiangsu Province,China (Grant Nos 2006KJB140133 and 2007KJD140241)
文摘Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic （FM） monolayer and an FM/antiferromagnetic （AFM） bilayer under a stress field, respectively. It then investigates the magnetoresistance （MR） of the spin-valve structure, which is built by an FM rnonolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling （FM coupling or AFM coupling） between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.
基金This work was financially supported by the National Science Foundation of China (No.50271007) and Beijing (No.2012011)
文摘Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it, the necessary conditions, including boththermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems,including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor andsemiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were alsointroduced.
文摘A GMR（giant magneto-resistive） spin valve sensor for magnetic recording has been designed in an attempt to solve the Barkhausen noise problem in small-sized GMR sensors.In this study,the GMR ratio of the top-pinned spin valve is optimized to a value of 13.2%.The free layer is magnetized perpendicular to the pinned layer by a CoCrPt permanent magnetic bias so that a linear magnetic field response can be obtained.An obvious improvement on performance is observed when the permanent magnetic bias is magnetized,while the GMR sensor has a steadier MR-H loop and a smaller coercive field.
文摘A series of Co/Si/(Co/Cu/Co) multilayers and Co/Si/Co sandwiches were prepared by high vacuum (electron-beam) evaporation. It was found that a Si spacer (≥0.9nm) could greatly decrease the interlayer coupling in Co/Si/Co sandwiches and there was no magnetoresistance(MR) or spin-valve MR in them due to the high resistivity of Si spacer. While in Co/Si/(Co/Cu/Co) multilayers, we observed a spin-valve MR of about (0.5%) through a (nominal) 2.7nm Si spacer at room temperature. The spin-valve MR in Co/Si/(Co/Cu/Co) multilayers was attributed to the enhanced spin polarization of conduction electrons caused by the top Co/Cu/Co sandwich with GMR mechanism and high spin-dependent scattering at Co/Cu interface.
