Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for appli...Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.展开更多
本文制备了2,9,16,23-四异丙氧基和2,9,16,23-四对甲基苯氧基2种酞菁铜(CuPc(OC3H7-i)4,CuPc(OC7H7)4,简称为烷氧基酞菁铜和苯氧基酞菁铜),并在基片上成功制得了二者的旋涂膜。利用AFM(Atomic force microscope)、UV-Vis和FTIR对薄膜的...本文制备了2,9,16,23-四异丙氧基和2,9,16,23-四对甲基苯氧基2种酞菁铜(CuPc(OC3H7-i)4,CuPc(OC7H7)4,简称为烷氧基酞菁铜和苯氧基酞菁铜),并在基片上成功制得了二者的旋涂膜。利用AFM(Atomic force microscope)、UV-Vis和FTIR对薄膜的表面形貌和谱学性质进行了分析。结果表明,以一定的旋转速度进行涂膜,可以获得较为均匀的酞菁铜薄膜,并且2种取代基团的酞菁表面形貌有着较为明显的差别。在室温下测试了2种酞菁薄膜对甲醇和乙醇气体的敏感性能,结果显示薄膜对测试的醇类有较高的灵敏度,对乙醇的灵敏度要大于甲醇,在同种测试气氛下苯氧基酞菁铜薄膜的气敏性能要高于烷氧基酞菁铜薄膜。2种薄膜对浓度为30μL·L-1乙醇气体的响应和恢复时间分别在30s和60s内。展开更多
Using different-solution-concentration precursors with citric acid as chelating agent and polyvinyl alcohol as dispersing media, Dy3+ activated LaVO4 films were deposited on indium tin oxide (ITO) substrates. The s...Using different-solution-concentration precursors with citric acid as chelating agent and polyvinyl alcohol as dispersing media, Dy3+ activated LaVO4 films were deposited on indium tin oxide (ITO) substrates. The scanning electronic microscope (SEM) showed that the compact and crack-free LaVO4:Dy3+ film could be obtained at a suitable solution concentration. The deposited films could absorb the ultraviolet light below 400 nm and were transparent in the visible and infrared region as evidenced by the transmission spectra, and the photolumines- cence spectra exhibited the characteristic emissions of Dy3+ peaking at 484 (blue) and 576 (yellow) nm due to the transitions of 4F9/2→6Hls/2 and 4F9/2→6H13/2, respectively. The potential application of LaVOa:Dy3+ film in the dye-sensitized solar cell (DSSC) was also discussed.展开更多
We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through s...We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon (n-Si) wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant (lower than 2.6) in the frequency range of 10-105 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.展开更多
In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor film...In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.展开更多
基金We acknowledge the support from the National Key R&D Program of the Ministry of Science and Technology of China(No.2022YFA1203801)the National Natural Science Foundation of China(grant numbers 51991340,51991343,52221001,62205055)+1 种基金the Hunan Key R&D Program Project(No.2022GK2005)Natural Science Foundation of Jiangsu Province(BK20220860).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.
文摘本文制备了2,9,16,23-四异丙氧基和2,9,16,23-四对甲基苯氧基2种酞菁铜(CuPc(OC3H7-i)4,CuPc(OC7H7)4,简称为烷氧基酞菁铜和苯氧基酞菁铜),并在基片上成功制得了二者的旋涂膜。利用AFM(Atomic force microscope)、UV-Vis和FTIR对薄膜的表面形貌和谱学性质进行了分析。结果表明,以一定的旋转速度进行涂膜,可以获得较为均匀的酞菁铜薄膜,并且2种取代基团的酞菁表面形貌有着较为明显的差别。在室温下测试了2种酞菁薄膜对甲醇和乙醇气体的敏感性能,结果显示薄膜对测试的醇类有较高的灵敏度,对乙醇的灵敏度要大于甲醇,在同种测试气氛下苯氧基酞菁铜薄膜的气敏性能要高于烷氧基酞菁铜薄膜。2种薄膜对浓度为30μL·L-1乙醇气体的响应和恢复时间分别在30s和60s内。
基金Project supported by the Higher Educational Natural Science Foundation of Anhui Province (KJ2010A012)National Natural Science Foundation of China (50901074)supported by the "211 Pro-ject" of Anhui University and Anhui University Young Scientific Research Fund (2009QN006A)
文摘Using different-solution-concentration precursors with citric acid as chelating agent and polyvinyl alcohol as dispersing media, Dy3+ activated LaVO4 films were deposited on indium tin oxide (ITO) substrates. The scanning electronic microscope (SEM) showed that the compact and crack-free LaVO4:Dy3+ film could be obtained at a suitable solution concentration. The deposited films could absorb the ultraviolet light below 400 nm and were transparent in the visible and infrared region as evidenced by the transmission spectra, and the photolumines- cence spectra exhibited the characteristic emissions of Dy3+ peaking at 484 (blue) and 576 (yellow) nm due to the transitions of 4F9/2→6Hls/2 and 4F9/2→6H13/2, respectively. The potential application of LaVOa:Dy3+ film in the dye-sensitized solar cell (DSSC) was also discussed.
基金This work was supported by the National Natural Science Foundation of China (No.51673181).
文摘We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon (n-Si) wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant (lower than 2.6) in the frequency range of 10-105 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.
基金financially supported by the National Natural Science Foundation of China (Nos. 51421002, 51627803, 91733301, 51761145042, 21501183, 51402348, 53872321, and 11874402)the Knowledge Innovation Program and the Strategic Priority Research Program (Grant XDB 12010400) of the Chinese Academy of Sciences
文摘In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.