We present a lithography-free technique for fabrication of clean,high quality graphene devices.This technique is based on evaporation through hard Si shadow masks,and eliminates contaminants introduced by lithographic...We present a lithography-free technique for fabrication of clean,high quality graphene devices.This technique is based on evaporation through hard Si shadow masks,and eliminates contaminants introduced by lithographical processes.We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography.To obtain ultra-high mobility devices,we extend this technique to fabricate suspended graphene samples with mobilities as high as 120000 cm^(2)/(V·s).展开更多
The effect of recrystallization annealing temperature on the properties and microstructure of one-step cold rolled steel strip for shadow mask was studied. The results showed that there was no yield point elongation w...The effect of recrystallization annealing temperature on the properties and microstructure of one-step cold rolled steel strip for shadow mask was studied. The results showed that there was no yield point elongation when the tensile tests were performed on the samples for annealing temperatures ranging from 750 ℃ to 810 ℃. Moreover, increasing annealing temperature resulted in large grains, which was beneficial to the formability and magnetic property of steel strips. On the other hand, when the sample was annealed at 840 ℃, its microstructure showed ununiforrnity with 0.04 % yield point elongation, which was not good for the function of the shadow mask. Therefore, the proper recrystallization annealing temperature was about 810 ℃ for the present steel strip for shadow mask.展开更多
基金We thank Feng Miao for trench wafer fabrication and Hsinyin Chiu for useful discussion.This work is sup-ported in part by Semiconductor Research Corporation(SRC),Office of Naval Research(ONR)N00014-09-1-0724ONR/Defense Microelectronics Activity(DMEA)H94003-09-2-0901the U.S.Army Research Laboratory and Army Research Office(ARO)/W911NF-09-1-0333。
文摘We present a lithography-free technique for fabrication of clean,high quality graphene devices.This technique is based on evaporation through hard Si shadow masks,and eliminates contaminants introduced by lithographical processes.We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography.To obtain ultra-high mobility devices,we extend this technique to fabricate suspended graphene samples with mobilities as high as 120000 cm^(2)/(V·s).
文摘The effect of recrystallization annealing temperature on the properties and microstructure of one-step cold rolled steel strip for shadow mask was studied. The results showed that there was no yield point elongation when the tensile tests were performed on the samples for annealing temperatures ranging from 750 ℃ to 810 ℃. Moreover, increasing annealing temperature resulted in large grains, which was beneficial to the formability and magnetic property of steel strips. On the other hand, when the sample was annealed at 840 ℃, its microstructure showed ununiforrnity with 0.04 % yield point elongation, which was not good for the function of the shadow mask. Therefore, the proper recrystallization annealing temperature was about 810 ℃ for the present steel strip for shadow mask.
