A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capa...A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.展开更多
A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information f...A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (</span><i><span style="font-family:Verdana;">n</span></i><span style="font-family:Verdana;">) and the diode saturation current (</span><i><span style="font-family:Verdana;">I<sub>o</sub></span></i><span style="font-family:Verdana;">). For a quick and fast convergence, we have determined the optimal ideality factor (</span><i><span style="font-family:Verdana;">n<sub>o</sub></span></i><span style="font-family:Verdana;">) and optimal saturation current (</span><i><span style="font-family:Verdana;">I<sub>oopt</sub></span></i><span style="font-family:Verdana;">) as the primary parameters by first assuming the optimal values of </span><i><span style="font-family:Verdana;">R<sub>sh</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">I<sub>ph</sub> </span></i><span style="font-family:Verdana;">at standard test conditions (STC). Further, we evaluated the effects of </span><i><span style="font-family:V展开更多
本实验应用Ex Vi Vo法将PDMS、PTFE、和PDMS/PU三种材料与兔颈总动脉和颈总静脉形成A—V短路,观察血液流经材料表面后材料表面与血液成份间的相互作用.从扫描电镜上观察到:随着材料表面与血流接触时间的延长,血液有形成份在三种材料表...本实验应用Ex Vi Vo法将PDMS、PTFE、和PDMS/PU三种材料与兔颈总动脉和颈总静脉形成A—V短路,观察血液流经材料表面后材料表面与血液成份间的相互作用.从扫描电镜上观察到:随着材料表面与血流接触时间的延长,血液有形成份在三种材料表面的附着趋势及附着后的变化程度不断增加,且随以下顺序即PDMS>PTFE>PDMS/PU.展开更多
基金supported by the National Natural Science Foundation of China(Nos.6133100661372021)
文摘A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.
文摘A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (</span><i><span style="font-family:Verdana;">n</span></i><span style="font-family:Verdana;">) and the diode saturation current (</span><i><span style="font-family:Verdana;">I<sub>o</sub></span></i><span style="font-family:Verdana;">). For a quick and fast convergence, we have determined the optimal ideality factor (</span><i><span style="font-family:Verdana;">n<sub>o</sub></span></i><span style="font-family:Verdana;">) and optimal saturation current (</span><i><span style="font-family:Verdana;">I<sub>oopt</sub></span></i><span style="font-family:Verdana;">) as the primary parameters by first assuming the optimal values of </span><i><span style="font-family:Verdana;">R<sub>sh</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">I<sub>ph</sub> </span></i><span style="font-family:Verdana;">at standard test conditions (STC). Further, we evaluated the effects of </span><i><span style="font-family:V
文摘本实验应用Ex Vi Vo法将PDMS、PTFE、和PDMS/PU三种材料与兔颈总动脉和颈总静脉形成A—V短路,观察血液流经材料表面后材料表面与血液成份间的相互作用.从扫描电镜上观察到:随着材料表面与血流接触时间的延长,血液有形成份在三种材料表面的附着趋势及附着后的变化程度不断增加,且随以下顺序即PDMS>PTFE>PDMS/PU.
