This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystall...This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.展开更多
Photovoltaic solar energy can be obtained by using several types of technologies, including silicon solar cells. The characterization of its solar cells makes it possible to know them better. This article presents, on...Photovoltaic solar energy can be obtained by using several types of technologies, including silicon solar cells. The characterization of its solar cells makes it possible to know them better. This article presents, on the one hand, the work that has been carried out on these cells. On the other hand, a theoretical study of the cell under illumination using Lambert’s W function. On the basis of the electrical parameters provided by the manufacturer, the parameters such as the series and shunt resistances and the electrical quantities such as the photocurrent and the photovoltage, are determined and studied according to the ideality factor of the diode. From the results obtained the shunt resistance increases when the ideality factor increases, the series resistance decreases very weakly.展开更多
This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such...This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.展开更多
This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS) photovoltaic module. The module performance parameters are determined from calculated mod...This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS) photovoltaic module. The module performance parameters are determined from calculated module parameters. An outdoor experimental setup is installed to carryout a series of I-V curve measurements under different irradiance and temperature conditions for the module. A numerical model which considers the effect of series and shunt resistances is developed to evaluate the different parameters of PV modules. Orthogonal distance regression (ODR) algorithm is adapted for fitting I-V measurements and extracting module parameters from I-V measurements. The values of module parameters, series resistance Rs, shunt resistance Rsh, diode ideality factor n and reverse saturation current Io determined from I-V measurements at different irradiation intensity and temperature range are in good agreement with the corresponding parameters obtained from the developed numerical model. The module parameters extracted from I-V measurements are employed to calculate the module performance parameters, i.e. open circuit voltage Voc, fill factor FF and module efficiency η at different irradiation intensity and temperature range. Present results indicate that the largest drop in open circuit voltage Voc due to about 20℃ increase in temperature is approximately 8.8% which is not compensated for by the relatively small increase in short circuit current, (2.9% in Isc), resulting in a reduction in maximum power of about 6.3%. Results let us conclude that the shunt resistance RSh increases with radiation at low radiation values (2). As radiation increases at high radiation values (> 400 W/m2), RSh begins to decease sharply and dramatically. Also, as the light intensity incident on the solar module increases, the series resistance and the output voltage decrease. When the irradiance intensity increases, the series resistance decreases but with a very low rate at the two studied temperatures ranges. The low rate decreas展开更多
Abstract *Corresponding author. In this paper, the electrical properties of heterojunction solar cells thin film n-CdS/p-CdTe from dielectric model have been studied. Based on the expression of the minority, carriers ...Abstract *Corresponding author. In this paper, the electrical properties of heterojunction solar cells thin film n-CdS/p-CdTe from dielectric model have been studied. Based on the expression of the minority, carriers density in the p-CdTe base of solar cell, the photocurrent density and that of the photo voltage are determined according to the cell dimensions, doping levels, the absorption coefficient, the solar irradiance and the temperature, etc. Fitting using Mathcad and Origin Lab software on the photocurrent and the photovoltage of the n-CdS/p-CdTe enabled to determine the series, shunt resistance and the maximum power point. The results obtained, in good agreement with experimental results, allow operating simulations for optimizing maximum outputs parameters (I<sub>p</sub>, V<sub>p</sub>). Thereafter, it is proposed a type of photovoltaic generator module with a good command of the design parameters for better efficiency.展开更多
This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve z...This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (R<sub>sh</sub>) and series (R<sub>s</sub>) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.展开更多
Solar Photovoltaic is a very promising solution that can greatly contribute in solving the increasing global energy demand. In both rural and urban areas, photovoltaic modules are in some instances installed close to ...Solar Photovoltaic is a very promising solution that can greatly contribute in solving the increasing global energy demand. In both rural and urban areas, photovoltaic modules are in some instances installed close to telecommunication antennas or voltage transformers which generate important magnetic fields in their vicinity. The question is whether or not these magnetic fields affect the performances of the photovoltaic installations. This article presents a modelling study of external magnetic field effect on the electrical parameters of a photovoltaic module. The photocurrent, the photovoltage, the electric power, the series and the shunt resistances of the photovoltaic module, made up of ideal cells, are deduced from those of a silicon solar cell. Then, the I-V and P-V curves are plotted and the theoretical values of the electrical parameters of the photovoltaic module are deduced. The series and shunt resistances of the photovoltaic module are calculated using well known equations and the previous electrical parameters. The results show the negative effect of magnetic field on the performance of a solar photovoltaic module.展开更多
This paper presents an analysis of the power loss of a set of photovoltaic modules exposed for more than fifteen years to solar radiation and other environmental factors. The study covered modules installed in 1989 an...This paper presents an analysis of the power loss of a set of photovoltaic modules exposed for more than fifteen years to solar radiation and other environmental factors. The study covered modules installed in 1989 and concluded with modules installed in 2004 (to 2009). Many of them were located in places high above the sea level and with high values of ultraviolet radiation. It is known that this power loss is caused by various factors: loss of optical properties of the protective glass, loss of transmittance of the encapsulation material (EVA), increase in series resistance, decrease in shunt resistance as well as other factors not analyzed in this study. The contribution of each of these factors to the power loss is measured and discussed in this analysis.展开更多
Polymer photovoltaic devices based on poly (2- methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH- PPV) with three weight-average molecular weights (Mw) have been fabricated with the device structure of ITO/...Polymer photovoltaic devices based on poly (2- methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH- PPV) with three weight-average molecular weights (Mw) have been fabricated with the device structure of ITO/PEDOT/ MEH-PPV/Ca/Ag, and the effect of the molecular weight on photovoltaic properties has been investigated. The experi- mental results show that the high molecular weight of MEH- PPV leads to low series resistance (Rs) and high short-circuit current. The low molecular weight of MEH-PPV leads to high shunt resistance (Rsh) and high open-circuit voltage. When the molecular weight is 6×105, the highest power con- version efficiency was observed.展开更多
文摘This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.
文摘Photovoltaic solar energy can be obtained by using several types of technologies, including silicon solar cells. The characterization of its solar cells makes it possible to know them better. This article presents, on the one hand, the work that has been carried out on these cells. On the other hand, a theoretical study of the cell under illumination using Lambert’s W function. On the basis of the electrical parameters provided by the manufacturer, the parameters such as the series and shunt resistances and the electrical quantities such as the photocurrent and the photovoltage, are determined and studied according to the ideality factor of the diode. From the results obtained the shunt resistance increases when the ideality factor increases, the series resistance decreases very weakly.
文摘This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.
文摘This work investigates the effects of temperature and radiation intensity on the parameters of a copper indium diselenide (CIS) photovoltaic module. The module performance parameters are determined from calculated module parameters. An outdoor experimental setup is installed to carryout a series of I-V curve measurements under different irradiance and temperature conditions for the module. A numerical model which considers the effect of series and shunt resistances is developed to evaluate the different parameters of PV modules. Orthogonal distance regression (ODR) algorithm is adapted for fitting I-V measurements and extracting module parameters from I-V measurements. The values of module parameters, series resistance Rs, shunt resistance Rsh, diode ideality factor n and reverse saturation current Io determined from I-V measurements at different irradiation intensity and temperature range are in good agreement with the corresponding parameters obtained from the developed numerical model. The module parameters extracted from I-V measurements are employed to calculate the module performance parameters, i.e. open circuit voltage Voc, fill factor FF and module efficiency η at different irradiation intensity and temperature range. Present results indicate that the largest drop in open circuit voltage Voc due to about 20℃ increase in temperature is approximately 8.8% which is not compensated for by the relatively small increase in short circuit current, (2.9% in Isc), resulting in a reduction in maximum power of about 6.3%. Results let us conclude that the shunt resistance RSh increases with radiation at low radiation values (2). As radiation increases at high radiation values (> 400 W/m2), RSh begins to decease sharply and dramatically. Also, as the light intensity incident on the solar module increases, the series resistance and the output voltage decrease. When the irradiance intensity increases, the series resistance decreases but with a very low rate at the two studied temperatures ranges. The low rate decreas
文摘Abstract *Corresponding author. In this paper, the electrical properties of heterojunction solar cells thin film n-CdS/p-CdTe from dielectric model have been studied. Based on the expression of the minority, carriers density in the p-CdTe base of solar cell, the photocurrent density and that of the photo voltage are determined according to the cell dimensions, doping levels, the absorption coefficient, the solar irradiance and the temperature, etc. Fitting using Mathcad and Origin Lab software on the photocurrent and the photovoltage of the n-CdS/p-CdTe enabled to determine the series, shunt resistance and the maximum power point. The results obtained, in good agreement with experimental results, allow operating simulations for optimizing maximum outputs parameters (I<sub>p</sub>, V<sub>p</sub>). Thereafter, it is proposed a type of photovoltaic generator module with a good command of the design parameters for better efficiency.
文摘This paper describes the theoretical model for calculating IV-curve of parallel vertical silicon solar cells (SCs) based on solving diffusion-recombination equation for such SC, which was suggested that two IV curve zones (those which are close to the short current and open circuit points) can be linearized. This linearalization allows obtaining the values of shunt (R<sub>sh</sub>) and series (R<sub>s</sub>) resistances. The evolution of the electric power based on these resistances was illustrated to show the values that shunt and series resistances must have to obtain a good efficiency.
文摘Solar Photovoltaic is a very promising solution that can greatly contribute in solving the increasing global energy demand. In both rural and urban areas, photovoltaic modules are in some instances installed close to telecommunication antennas or voltage transformers which generate important magnetic fields in their vicinity. The question is whether or not these magnetic fields affect the performances of the photovoltaic installations. This article presents a modelling study of external magnetic field effect on the electrical parameters of a photovoltaic module. The photocurrent, the photovoltage, the electric power, the series and the shunt resistances of the photovoltaic module, made up of ideal cells, are deduced from those of a silicon solar cell. Then, the I-V and P-V curves are plotted and the theoretical values of the electrical parameters of the photovoltaic module are deduced. The series and shunt resistances of the photovoltaic module are calculated using well known equations and the previous electrical parameters. The results show the negative effect of magnetic field on the performance of a solar photovoltaic module.
文摘This paper presents an analysis of the power loss of a set of photovoltaic modules exposed for more than fifteen years to solar radiation and other environmental factors. The study covered modules installed in 1989 and concluded with modules installed in 2004 (to 2009). Many of them were located in places high above the sea level and with high values of ultraviolet radiation. It is known that this power loss is caused by various factors: loss of optical properties of the protective glass, loss of transmittance of the encapsulation material (EVA), increase in series resistance, decrease in shunt resistance as well as other factors not analyzed in this study. The contribution of each of these factors to the power loss is measured and discussed in this analysis.
文摘Polymer photovoltaic devices based on poly (2- methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH- PPV) with three weight-average molecular weights (Mw) have been fabricated with the device structure of ITO/PEDOT/ MEH-PPV/Ca/Ag, and the effect of the molecular weight on photovoltaic properties has been investigated. The experi- mental results show that the high molecular weight of MEH- PPV leads to low series resistance (Rs) and high short-circuit current. The low molecular weight of MEH-PPV leads to high shunt resistance (Rsh) and high open-circuit voltage. When the molecular weight is 6×105, the highest power con- version efficiency was observed.
