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116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer
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作者 龙善丽 刘艳 +2 位作者 贺克军 唐兴刚 陈钱 《Journal of Semiconductors》 EI CAS CSCD 2014年第9期117-121,共5页
A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noi... A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 /μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5×2.5 mm2 and the current is 3.5 mA. 展开更多
关键词 in-circuit reprogrammable technique MEMS accelerometer modulation and demodulation sensitiv-ity of accelerometer
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