In order to improve the cycle stability of La-Mg-Ni-Co type alloy electrode, rapid quenching technology was employed. The effects of rapid quenching on the microstructure and cycle stability of the alloy were investig...In order to improve the cycle stability of La-Mg-Ni-Co type alloy electrode, rapid quenching technology was employed. The effects of rapid quenching on the microstructure and cycle stability of the alloy were investigated. The obtained results show that the La2Mg(Ni0.85Co0.15)9M0.1 (M=B, Cr) alloy electrodes are composed of (La, Mg)Ni3 phase, LaNi5 phase and a small amount of the LaNi2 phase. A trace of the Ni2B phase exists in the as-cast MB alloy, and the Ni2B phase in the alloy nearly disappears after rapid quenching. Rapid quenching technology can slightly improve the cycling life of the alloy. When the quenching rate increases from 0 m·s-1 (As-cast is defined as quenching rate of 0 m·s-1) to 30 m·s-1, the cycle lives of the MB, MCr alloys enhance from 86 and 87 cycles to 106 and 119 cycles, respectively. On the other hand, the average capacity decay rates of the MB, MCr alloys decrease from 1.7172 and 1.7178 mAh·g-1·cycle-1 to 1.5751 and 1.3060 mAh·g-1·cycle-1 after 86 charge-discharges cycling, respectively.展开更多
The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a conti...The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.展开更多
检测了40℃、10.5%的AQUATENSID FNL淬火介质的冷却曲线,研究了不同截面35Cr Mo、40Cr Ni Mo试样淬火后,经不同温度回火后的表面硬度、力学性能变化规律,并用ORIGIN 7.5数据绘图工具绘制了不同截面试样在不同回火温度下表面硬度和力学...检测了40℃、10.5%的AQUATENSID FNL淬火介质的冷却曲线,研究了不同截面35Cr Mo、40Cr Ni Mo试样淬火后,经不同温度回火后的表面硬度、力学性能变化规律,并用ORIGIN 7.5数据绘图工具绘制了不同截面试样在不同回火温度下表面硬度和力学性能的关系图。结果表明,AQUATENSID FNL淬火介质冷却特性满足35Cr Mo、40Cr Ni Mo材质一定截面零件淬火冷却需求,并且选取合适热处理工艺参数调质可得到相应的表面硬度和力学性能,并且符合相关行业标准和规范。展开更多
基金This work was financially supported by National Natural Science Foundations of China (No.50131040)Key Technologies R & D Program of Inner Mongolia (No.20050205)College Scientific Research Project of Inner Mongolia (No.NJ05064).
文摘In order to improve the cycle stability of La-Mg-Ni-Co type alloy electrode, rapid quenching technology was employed. The effects of rapid quenching on the microstructure and cycle stability of the alloy were investigated. The obtained results show that the La2Mg(Ni0.85Co0.15)9M0.1 (M=B, Cr) alloy electrodes are composed of (La, Mg)Ni3 phase, LaNi5 phase and a small amount of the LaNi2 phase. A trace of the Ni2B phase exists in the as-cast MB alloy, and the Ni2B phase in the alloy nearly disappears after rapid quenching. Rapid quenching technology can slightly improve the cycling life of the alloy. When the quenching rate increases from 0 m·s-1 (As-cast is defined as quenching rate of 0 m·s-1) to 30 m·s-1, the cycle lives of the MB, MCr alloys enhance from 86 and 87 cycles to 106 and 119 cycles, respectively. On the other hand, the average capacity decay rates of the MB, MCr alloys decrease from 1.7172 and 1.7178 mAh·g-1·cycle-1 to 1.5751 and 1.3060 mAh·g-1·cycle-1 after 86 charge-discharges cycling, respectively.
基金supported by the National Natural Science Foundation of China(Nos.61534005,11475025 and 11375029)
文摘The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.
文摘检测了40℃、10.5%的AQUATENSID FNL淬火介质的冷却曲线,研究了不同截面35Cr Mo、40Cr Ni Mo试样淬火后,经不同温度回火后的表面硬度、力学性能变化规律,并用ORIGIN 7.5数据绘图工具绘制了不同截面试样在不同回火温度下表面硬度和力学性能的关系图。结果表明,AQUATENSID FNL淬火介质冷却特性满足35Cr Mo、40Cr Ni Mo材质一定截面零件淬火冷却需求,并且选取合适热处理工艺参数调质可得到相应的表面硬度和力学性能,并且符合相关行业标准和规范。
