A supported TiO2/γ-Al2O3 photocatalyst has been prepared by γ-Al2O3 pellet-filled dielectric barrier discharges induced plasma CVD at atmospheric pressure and room temperature. The TiO2/γ-Al2O3 photocatalyst exhibi...A supported TiO2/γ-Al2O3 photocatalyst has been prepared by γ-Al2O3 pellet-filled dielectric barrier discharges induced plasma CVD at atmospheric pressure and room temperature. The TiO2/γ-Al2O3 photocatalyst exhibits higher photocatalytic activity than Degussa P25, and much higher photocatalytic activity than that prepared by thermal CVD.展开更多
To deposit TiO2 films through plasma CVD, the partial pressure ratio of O2 to TIC14 should be greater than the stoichiometric ratio （PO2/PTiCl4 〉 1）. However, this may lead to the formation of powder instead of fil...To deposit TiO2 films through plasma CVD, the partial pressure ratio of O2 to TIC14 should be greater than the stoichiometric ratio （PO2/PTiCl4 〉 1）. However, this may lead to the formation of powder instead of film on the substrate when using volume dielectric barrier discharge （volume-DBD） at atmospheric pressure. In this study, by adding N2 into the working gas Ar, TiO2 photocatalytic films were successfully fabricated in the presence of excess O2 （PO2/PTiC14 = 2.6） by using a wire-to-plate atmospheric-pressure volume-DBD. The tuning effect of N2 on the deposition of TiO2 film was studied in detail. The results showed that by increasing the N2 content, the deposition rate and particle size of the TiO2 film were reduced, and its photocatalytic activity was enhanced. The tuning mechanism of N2 is further discussed.展开更多
The development of electric and hybrid automobiles has gained momentum with the growth of interest in the field of miniaturization of electrode materials. In particular, technologies that improve the electrical proper...The development of electric and hybrid automobiles has gained momentum with the growth of interest in the field of miniaturization of electrode materials. In particular, technologies that improve the electrical property of stainless steel, while maintaining corrosion resistance, are gaining interest in terms of maintaining specific resistivity. The study on metal doping in diamond-like carbon coating is currently in progress to enhance the characteristics of conductivity and corrosion resistance with excellent properties such as corrosion resistance and lubrication coating. It is the process of using Cr arc with DLC coating to actuate AEGD. The change of I(D)/I(G) (Graphite peak (G) and disordered bond peak (D)) ratio and G-peak position in Cr-containing DLC film causes graphitization and thus lowers the basic electric resistance. Simultaneous input of nitrogen gas leads to deposition of CrN by a specific ratio of Cr and N in the DLC coating, and the nitrogen atoms replace hydrogen in bonding to increase the sp3 bond structure in the DLC film, in which CrN is not deposited, to result in specific resistivity of a specific value or less.展开更多
Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition （MPCVD） reactor with different deposition parameters. Adherent nanocrystall...Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition （MPCVD） reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.展开更多
For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma CVD was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma CVD ...For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma CVD was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies o f Iodine included carbon films showed flat surfaces for each samples. On the str ucture of films estimated by Raman spectroscopy, amorphous carbon was recognized . And I2 peaks were observed in XPS spectra. As a result of friction test, frict ion coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of fricti on coefficient was recognized. Iodine inclusion for carbon materials can be achi eved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-inc luded carbon showed lower than of without iodine展开更多
文摘A supported TiO2/γ-Al2O3 photocatalyst has been prepared by γ-Al2O3 pellet-filled dielectric barrier discharges induced plasma CVD at atmospheric pressure and room temperature. The TiO2/γ-Al2O3 photocatalyst exhibits higher photocatalytic activity than Degussa P25, and much higher photocatalytic activity than that prepared by thermal CVD.
基金supported by National Natural Science Foundation of China(Nos.10835004,51077009)the Fundamental Research Funds for the Central Universities
文摘To deposit TiO2 films through plasma CVD, the partial pressure ratio of O2 to TIC14 should be greater than the stoichiometric ratio （PO2/PTiCl4 〉 1）. However, this may lead to the formation of powder instead of film on the substrate when using volume dielectric barrier discharge （volume-DBD） at atmospheric pressure. In this study, by adding N2 into the working gas Ar, TiO2 photocatalytic films were successfully fabricated in the presence of excess O2 （PO2/PTiC14 = 2.6） by using a wire-to-plate atmospheric-pressure volume-DBD. The tuning effect of N2 on the deposition of TiO2 film was studied in detail. The results showed that by increasing the N2 content, the deposition rate and particle size of the TiO2 film were reduced, and its photocatalytic activity was enhanced. The tuning mechanism of N2 is further discussed.
文摘The development of electric and hybrid automobiles has gained momentum with the growth of interest in the field of miniaturization of electrode materials. In particular, technologies that improve the electrical property of stainless steel, while maintaining corrosion resistance, are gaining interest in terms of maintaining specific resistivity. The study on metal doping in diamond-like carbon coating is currently in progress to enhance the characteristics of conductivity and corrosion resistance with excellent properties such as corrosion resistance and lubrication coating. It is the process of using Cr arc with DLC coating to actuate AEGD. The change of I(D)/I(G) (Graphite peak (G) and disordered bond peak (D)) ratio and G-peak position in Cr-containing DLC film causes graphitization and thus lowers the basic electric resistance. Simultaneous input of nitrogen gas leads to deposition of CrN by a specific ratio of Cr and N in the DLC coating, and the nitrogen atoms replace hydrogen in bonding to increase the sp3 bond structure in the DLC film, in which CrN is not deposited, to result in specific resistivity of a specific value or less.
基金supported by Canada Chair Program and by the Natural Sciences and Engineering Research Council of Canada (NSERC)
文摘Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition （MPCVD） reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.
文摘For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma CVD was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma CVD apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies o f Iodine included carbon films showed flat surfaces for each samples. On the str ucture of films estimated by Raman spectroscopy, amorphous carbon was recognized . And I2 peaks were observed in XPS spectra. As a result of friction test, frict ion coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of fricti on coefficient was recognized. Iodine inclusion for carbon materials can be achi eved by RF plasma CVD using an I2-C2H5OH reactant. The coefficient of iodine-inc luded carbon showed lower than of without iodine
