The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as h...The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as high-κ gate dielectric and metal gate, strain channel carrier mobility enhancement technology, and novel non-planar MOSFET structures are all possible candidate technologies. In this paper, we will specify our discussion on the research progress of high-κ-metal gate and non-planar MOSFET-technologies that are suitable to 32 nm technology node and beyond.展开更多
The mobile communication (radio, mobile, satellite telephony…) insert band filters which are required to comply with stringent pass-band characteristics concerning the selectivity, the group delay, the insertion loss...The mobile communication (radio, mobile, satellite telephony…) insert band filters which are required to comply with stringent pass-band characteristics concerning the selectivity, the group delay, the insertion losses and the mass and volume. The mass and volume of payload electronic equipment is a significant contributor to the overall cost of space systems. Within this framework, many improvements were made in the design of filters and multiplexers which represent a considerable portion of the overall satellite payload. The High Temperature Superconducting (HTS) planar technology permits to realize compact size filtering devices. Moreover, it could also provide a superior performance not attainable by any other technology. However, not controllable parameters in the manufacturing processes (indistinctness of the engraving, the not uniformity of substratum thickness) do not allow to obtain a precision on the echo’s frequency and to keep a high quality factor. So, it is necessary to use method to tune the center frequency of filters after the fabrication or to study new resonator topologies which present lower sensitivity to LAIO3 substrate thickness. This last point is the object of this article.展开更多
文摘The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as high-κ gate dielectric and metal gate, strain channel carrier mobility enhancement technology, and novel non-planar MOSFET structures are all possible candidate technologies. In this paper, we will specify our discussion on the research progress of high-κ-metal gate and non-planar MOSFET-technologies that are suitable to 32 nm technology node and beyond.
文摘The mobile communication (radio, mobile, satellite telephony…) insert band filters which are required to comply with stringent pass-band characteristics concerning the selectivity, the group delay, the insertion losses and the mass and volume. The mass and volume of payload electronic equipment is a significant contributor to the overall cost of space systems. Within this framework, many improvements were made in the design of filters and multiplexers which represent a considerable portion of the overall satellite payload. The High Temperature Superconducting (HTS) planar technology permits to realize compact size filtering devices. Moreover, it could also provide a superior performance not attainable by any other technology. However, not controllable parameters in the manufacturing processes (indistinctness of the engraving, the not uniformity of substratum thickness) do not allow to obtain a precision on the echo’s frequency and to keep a high quality factor. So, it is necessary to use method to tune the center frequency of filters after the fabrication or to study new resonator topologies which present lower sensitivity to LAIO3 substrate thickness. This last point is the object of this article.
