A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorp...A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.展开更多
In recent years,more than 6 million room temperature vulcanized(RTV)silicone rubber coated cap and pin insulators with high mechanical ratings were used in ultra-high voltage transmission lines in China to improve pol...In recent years,more than 6 million room temperature vulcanized(RTV)silicone rubber coated cap and pin insulators with high mechanical ratings were used in ultra-high voltage transmission lines in China to improve pollution performance.However,the unexpected puncture phenomena of RTV coated insulators were exposed during steep-front impulse voltage tests;for instance,the steep-front impulse voltage test pass rate decreased to less than 50% for 550 kN glass insulators with RTV coatings.The steep-front impulse voltage test is the most effective method used to check the insulation quality of cap and pin insulators・This unexpected phenomenon once caused serious concerns to power utilities.In this paper,several possible factors that affect the puncture of insulators were analyzed.Then,the extent of the decline in the breakdown of the 550 kN glass cap and pin insulators with and without RTV coatings were studied.The initial puncture location was then found,and the developmental process of the arc on the insulator surface in steep-front impulse voltage tests was observed with an ultra-high-speed intensified charge coupled device camera.Lastly,a breakdown mechanism is proposed.The puncture phenomena of a RTV coated insulator in a steep-front impulse voltage test is essentially an electrical breakdown of the internal insulation・The RTV coating induces the close adherence of the arc to the surface of the insulator.Such closeness changes the arc development path on the insulator surface and facilitates easy breakdown in the shed weak part.All these factors result in a significant increase in the breakdown probability of RTV coated insulators in steepfront impulse voltage tests.展开更多
基金Project(61040061) supported by the National Natural Science Foundation of ChinaProject supported by Hunan Provincial Innovation Foundation for Postgraduate Students,China
文摘A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.
基金supported by the National Natural Science Foundation of China(51577099).
文摘In recent years,more than 6 million room temperature vulcanized(RTV)silicone rubber coated cap and pin insulators with high mechanical ratings were used in ultra-high voltage transmission lines in China to improve pollution performance.However,the unexpected puncture phenomena of RTV coated insulators were exposed during steep-front impulse voltage tests;for instance,the steep-front impulse voltage test pass rate decreased to less than 50% for 550 kN glass insulators with RTV coatings.The steep-front impulse voltage test is the most effective method used to check the insulation quality of cap and pin insulators・This unexpected phenomenon once caused serious concerns to power utilities.In this paper,several possible factors that affect the puncture of insulators were analyzed.Then,the extent of the decline in the breakdown of the 550 kN glass cap and pin insulators with and without RTV coatings were studied.The initial puncture location was then found,and the developmental process of the arc on the insulator surface in steep-front impulse voltage tests was observed with an ultra-high-speed intensified charge coupled device camera.Lastly,a breakdown mechanism is proposed.The puncture phenomena of a RTV coated insulator in a steep-front impulse voltage test is essentially an electrical breakdown of the internal insulation・The RTV coating induces the close adherence of the arc to the surface of the insulator.Such closeness changes the arc development path on the insulator surface and facilitates easy breakdown in the shed weak part.All these factors result in a significant increase in the breakdown probability of RTV coated insulators in steepfront impulse voltage tests.
