One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can tra...One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.展开更多
Sub\|shot\|noise measurement for slight absorption is experimentally achieved with the twin beams of quantum correlation. The improvement in signal\|to\|noise ratio of 2.5 dB relative to the SNL is obtained. The exper...Sub\|shot\|noise measurement for slight absorption is experimentally achieved with the twin beams of quantum correlation. The improvement in signal\|to\|noise ratio of 2.5 dB relative to the SNL is obtained. The experimental results demonstrate the predictions of the semi\|classical theory.展开更多
提出一种新型 Ga As/ Ga Al As子带间光吸收的红外光电导探测机理 ,利用 MOCVD系统进行器件材料的生长 ,研制了 2 0 0μm× 2 0 0μm的台面形式单管 ,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象 ,对器件的性...提出一种新型 Ga As/ Ga Al As子带间光吸收的红外光电导探测机理 ,利用 MOCVD系统进行器件材料的生长 ,研制了 2 0 0μm× 2 0 0μm的台面形式单管 ,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象 ,对器件的性能测试结果表明 ,器件的光电流响应和信噪比随着阱数增加而增加 ,器件噪声比常规 Ga As/ Ga Al展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335)the National Ten Thousand Talent Program for Young Topnotch Talents,the Key Research and Development Program of Changchun City(Grant No.21ZY05)+2 种基金the 100 Talents Program of the Chinese Academy of Sciences,Youth Innovation Promotion Association,CAS(Grant No.2020225)Jilin Province Science Fund(Grant No.20210101145JC)XuGuang Talents Plan of CIOMP。
文摘One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.
文摘Sub\|shot\|noise measurement for slight absorption is experimentally achieved with the twin beams of quantum correlation. The improvement in signal\|to\|noise ratio of 2.5 dB relative to the SNL is obtained. The experimental results demonstrate the predictions of the semi\|classical theory.
文摘提出一种新型 Ga As/ Ga Al As子带间光吸收的红外光电导探测机理 ,利用 MOCVD系统进行器件材料的生长 ,研制了 2 0 0μm× 2 0 0μm的台面形式单管 ,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象 ,对器件的性能测试结果表明 ,器件的光电流响应和信噪比随着阱数增加而增加 ,器件噪声比常规 Ga As/ Ga Al
