TiO 2 films with nano-porous structures were obtained by adding the poly-ethylene glycol(PEG) in the TiO 2 colloid. Then the as-prepared films were sensitized by the trithiophene carboxylic diacid(TTDA), pentathiophen...TiO 2 films with nano-porous structures were obtained by adding the poly-ethylene glycol(PEG) in the TiO 2 colloid. Then the as-prepared films were sensitized by the trithiophene carboxylic diacid(TTDA), pentathiophene carboxylic diacid(PTDA), N3[Ru(Ⅱ)L 2(SCN) 2, L=2,2′-bipyridyl-4,4′-dicarboxylate] dye and the mixture of PTDA and N3 dye, respectively. After fabricating the films into devices, the I-V curves were determined and their photovoltaic properties were studied. The results show that the porous TiO 2 films can be sensitized by both TTDA and PTDA effectively, while the film sensitized by the mixture of PTDA and N3 dye has a maximum photo-electric conversion efficiency.展开更多
以钛酸丁酯为钛源,通过盐酸调制的两步溶剂热法在FTO基底上制备异质结阵列Bi_2S_3/TiO_2纳米棒。利用XRD、SEM、UV-Vis和电化学工作站等测试手段对Bi_2S_3/TiO_2纳米棒异质结阵列电极的晶体结构、表面形貌、光学和光电化学性质进行了表...以钛酸丁酯为钛源,通过盐酸调制的两步溶剂热法在FTO基底上制备异质结阵列Bi_2S_3/TiO_2纳米棒。利用XRD、SEM、UV-Vis和电化学工作站等测试手段对Bi_2S_3/TiO_2纳米棒异质结阵列电极的晶体结构、表面形貌、光学和光电化学性质进行了表征。结果表明,经Bi_2S_3敏化后的TiO_2纳米棒阵列薄膜对可见光的吸收明显增强,吸收光波长由400 nm增至700 nm。在标准模拟太阳光(AM 1.5 G,100 m W/cm2)照射下,复合薄膜开路电压为1.06 V,短路电流密度为0.11 m A/cm2,与纯TiO_2纳米棒薄膜相比,光电转化能力显著提高。展开更多
文摘TiO 2 films with nano-porous structures were obtained by adding the poly-ethylene glycol(PEG) in the TiO 2 colloid. Then the as-prepared films were sensitized by the trithiophene carboxylic diacid(TTDA), pentathiophene carboxylic diacid(PTDA), N3[Ru(Ⅱ)L 2(SCN) 2, L=2,2′-bipyridyl-4,4′-dicarboxylate] dye and the mixture of PTDA and N3 dye, respectively. After fabricating the films into devices, the I-V curves were determined and their photovoltaic properties were studied. The results show that the porous TiO 2 films can be sensitized by both TTDA and PTDA effectively, while the film sensitized by the mixture of PTDA and N3 dye has a maximum photo-electric conversion efficiency.
文摘以钛酸丁酯为钛源,通过盐酸调制的两步溶剂热法在FTO基底上制备异质结阵列Bi_2S_3/TiO_2纳米棒。利用XRD、SEM、UV-Vis和电化学工作站等测试手段对Bi_2S_3/TiO_2纳米棒异质结阵列电极的晶体结构、表面形貌、光学和光电化学性质进行了表征。结果表明,经Bi_2S_3敏化后的TiO_2纳米棒阵列薄膜对可见光的吸收明显增强,吸收光波长由400 nm增至700 nm。在标准模拟太阳光(AM 1.5 G,100 m W/cm2)照射下,复合薄膜开路电压为1.06 V,短路电流密度为0.11 m A/cm2,与纯TiO_2纳米棒薄膜相比,光电转化能力显著提高。
