期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
600V新型槽栅内透明集电极IGBT的仿真 被引量:3
1
作者 张惠惠 胡冬青 +3 位作者 吴郁 贾云鹏 周新田 穆辛 《半导体技术》 CAS CSCD 北大核心 2013年第10期745-749,775,共6页
针对低压透明集电极绝缘栅双极晶体管(ITC-IGBT)制造难度高的问题,基于内透明集电极(ITC)技术,将点注入局部窄台面(PNM)槽栅结构应用于IGBT中,提出一种600 V新型槽栅内透明集电极IGBT。采用仿真工具ISE-TCAD,对PNM-ITC-IGBT的导通特性... 针对低压透明集电极绝缘栅双极晶体管(ITC-IGBT)制造难度高的问题,基于内透明集电极(ITC)技术,将点注入局部窄台面(PNM)槽栅结构应用于IGBT中,提出一种600 V新型槽栅内透明集电极IGBT。采用仿真工具ISE-TCAD,对PNM-ITC-IGBT的导通特性、开关特性、短路特性等进行仿真,重点研究局域载流子寿命控制层的位置及其对内载流子寿命的影响,并与普通槽栅内透明集电极IGBT进行对比。结果表明,新结构具有较低的通态压降和关断损耗,尤其在短路特性方面,提高了槽栅IGBT的抗烧毁能力,且局域载流子寿命控制层的位置和寿命存在最佳范围。 展开更多
关键词 绝缘栅双极晶体管(IGBT) 内透明集电极(ITC) 槽栅 点注入 局部窄台面(pnm
下载PDF
Superjunction nanoscale partially narrow mesa IGBT towards superior performance
2
作者 喻巧群 陆江 +4 位作者 刘海南 罗家俊 李博 王立新 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第3期582-587,共6页
We present a detailed study of a superjunction (S J) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure a... We present a detailed study of a superjunction (S J) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (Vce(sat)) and low turn-off loss (Eoff) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce(sat) and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit. 展开更多
关键词 insulated gate bipolar transistor (IGBT) partially narrow mesa pnm superjunction (S J) turn-offloss
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部