The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of ...The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of the busbars and devices model are simulated in the electric simulator PSlM to analyze the effects of the parasitic inductance on the switching characteristics of the integrated gate commutated thyristor （IGCT） in different topology positions. The simulation results agree well with the measured impedance analyzer results and the IGCT test results, which proves the effectiveness of the modeling method for the large, complex busbars.展开更多
Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an eval...Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an evaluation method of theinfluence of V_(TH) hysteresis on the switching characteristics ofSiC MOSFETs. This method can eliminate the impact of triggerlevel and obtain the dynamic V_(TH). Furthermore, the influence ofparasitic parameters on dynamic V_(TH) hysteresis is theoreticallyanalyzed. Double pulse tests under different parasitic parametersare performed on three SiC MOSFETs with different gatestructures to verify the analysis. Results show that gate resistance(R_(G)) and source inductance (L_(S)) have more significant effectson dynamic V_(TH) hysteresis compared with gate inductance anddrain inductance. V_(TH) hysteresis phenomenon weakens withincrease of R_(G) or L_(S), which is related to device structure.The results presented in this paper can provide guidance forthe design of circuit parasitic parameters of SiC MOSFETs toregulate V_(TH) hysteresis.展开更多
Significant progress has been made in the prevention,control,and elimination of human parasitic diseases in China in the past 60 years.However,parasitic diseases of poverty remain major causes of morbidity and mortali...Significant progress has been made in the prevention,control,and elimination of human parasitic diseases in China in the past 60 years.However,parasitic diseases of poverty remain major causes of morbidity and mortality,and inflict enormous economic costs on societies.In this article,we review the prevalence rates,geographical distributions,epidemic characteristics,risk factors,and clinical manifestations of parasitic diseases of poverty listed in the first issue of the journal Infectious Diseases of Poverty on 25 October 2012.We also address the challenges facing control of parasitic diseases of poverty and provide suggestions for better control.展开更多
随着电动飞机的发展,固态功率控制器(SSPC)作为关键器件,逐渐成为国内外研究的热点。由于SSPC结构复杂且需要频繁调试,所以准确的仿真模型可以为产品设计提供较大帮助。主要使用Ansys Q3D Extractor等软件,对第三代CREE SiC MOSFET组成...随着电动飞机的发展,固态功率控制器(SSPC)作为关键器件,逐渐成为国内外研究的热点。由于SSPC结构复杂且需要频繁调试,所以准确的仿真模型可以为产品设计提供较大帮助。主要使用Ansys Q3D Extractor等软件,对第三代CREE SiC MOSFET组成的SSPC进行基于产品结构的寄生参数提取,并建立SSPC单路和整体电学等效模型。对SSPC的阻性负载开关特性进行了仿真分析,发现波形中并无明显振荡现象。最后得出了寄生参数的影响基本可以忽略的结论。展开更多
文摘The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of the busbars and devices model are simulated in the electric simulator PSlM to analyze the effects of the parasitic inductance on the switching characteristics of the integrated gate commutated thyristor （IGCT） in different topology positions. The simulation results agree well with the measured impedance analyzer results and the IGCT test results, which proves the effectiveness of the modeling method for the large, complex busbars.
基金the Science andTechnology Project of State Grid Corporation of China (No. 52094021N012).
文摘Threshold voltage (V_(TH)) hysteresis affects the dynamic characteristics of silicon carbide (SiC) MOSFETs, whichin turn affects reliability of a device. In this paper, a dynamichysteresis curve is proposed as an evaluation method of theinfluence of V_(TH) hysteresis on the switching characteristics ofSiC MOSFETs. This method can eliminate the impact of triggerlevel and obtain the dynamic V_(TH). Furthermore, the influence ofparasitic parameters on dynamic V_(TH) hysteresis is theoreticallyanalyzed. Double pulse tests under different parasitic parametersare performed on three SiC MOSFETs with different gatestructures to verify the analysis. Results show that gate resistance(R_(G)) and source inductance (L_(S)) have more significant effectson dynamic V_(TH) hysteresis compared with gate inductance anddrain inductance. V_(TH) hysteresis phenomenon weakens withincrease of R_(G) or L_(S), which is related to device structure.The results presented in this paper can provide guidance forthe design of circuit parasitic parameters of SiC MOSFETs toregulate V_(TH) hysteresis.
基金Project support was provided by the National Key Basic Research Program(973 Program)of China(Grant No.2015CB150300)the National Natural Science Foundation of China(Grant Nos.31230073 and 31472184)the Natural Science Foundation of Gansu Province for Distinguished Young Scholars(Grant No.1506RJDA133).
文摘Significant progress has been made in the prevention,control,and elimination of human parasitic diseases in China in the past 60 years.However,parasitic diseases of poverty remain major causes of morbidity and mortality,and inflict enormous economic costs on societies.In this article,we review the prevalence rates,geographical distributions,epidemic characteristics,risk factors,and clinical manifestations of parasitic diseases of poverty listed in the first issue of the journal Infectious Diseases of Poverty on 25 October 2012.We also address the challenges facing control of parasitic diseases of poverty and provide suggestions for better control.
文摘随着电动飞机的发展,固态功率控制器(SSPC)作为关键器件,逐渐成为国内外研究的热点。由于SSPC结构复杂且需要频繁调试,所以准确的仿真模型可以为产品设计提供较大帮助。主要使用Ansys Q3D Extractor等软件,对第三代CREE SiC MOSFET组成的SSPC进行基于产品结构的寄生参数提取,并建立SSPC单路和整体电学等效模型。对SSPC的阻性负载开关特性进行了仿真分析,发现波形中并无明显振荡现象。最后得出了寄生参数的影响基本可以忽略的结论。
