By dip-coating poly（3,4-ethylenedioxythiophene）/poly（styrenesulfonate）,an organic semiconductor,on slide glass and then calcining at a low temperature of 100 ℃,the organic-inorganic composite TiO2-PEDT/PSS film w...By dip-coating poly（3,4-ethylenedioxythiophene）/poly（styrenesulfonate）,an organic semiconductor,on slide glass and then calcining at a low temperature of 100 ℃,the organic-inorganic composite TiO2-PEDT/PSS film was prepared.In the TiO2-PEDT/PSS dual-layer structure,photo-generated electrons in the TiO2 layer inject into the PEDT/PSS layer under UV illumination,and the recombination of photo-generated electrons and holes in the TiO2 layer is suppressed consequently,so the photocatalytic activity of this composite film is increased significantly compared with TiO2 film.展开更多
Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the indi...Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.展开更多
文摘By dip-coating poly（3,4-ethylenedioxythiophene）/poly（styrenesulfonate）,an organic semiconductor,on slide glass and then calcining at a low temperature of 100 ℃,the organic-inorganic composite TiO2-PEDT/PSS film was prepared.In the TiO2-PEDT/PSS dual-layer structure,photo-generated electrons in the TiO2 layer inject into the PEDT/PSS layer under UV illumination,and the recombination of photo-generated electrons and holes in the TiO2 layer is suppressed consequently,so the photocatalytic activity of this composite film is increased significantly compared with TiO2 film.
文摘Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.
