Electrochromic technology has gained significant attention in various fields such as displays,smart windows,biomedical monitoring,military camouflage,human-machine interaction,and electronic skin due to its ability to...Electrochromic technology has gained significant attention in various fields such as displays,smart windows,biomedical monitoring,military camouflage,human-machine interaction,and electronic skin due to its ability to provide reversible and fast color changes under applied voltage.With the rapid development and increasing demand for flexible electronics,flexible electrochromic devices(FECDs)that offer smarter and more controllable light modulation hold great promise for practical applications.The electrochromic material(ECM)undergoing color changes during the electrochemical reactions is one of the key components in electrochromic devices.Among the ECMs,viologens,a family of organic small molecules with 1,1'-disubstituted-4,4'-dipyridinium salts,have garnered extensive research interest,due to their well-reversible redox reactions,excellent electron acceptance ability,and the ability to produce multiple colors.Notably,viologen-based FECDs demonstrate color changes in the liquid or semisolid electrolyte layer,eliminating the need for two solid electrodes and thus simplifying the device structure.Consequently,viologens offer significant potential for the development of FECDs with high optical contrast,fast response speed,and excellent stability.This review aims to provide a comprehensive overview of the progress and perspectives of viologen-based FECDs.It begins by summarizing the typical structure and recent exciting developments in viologen-based FECDs,along with their advantages and disadvantages.Furthermore,the review discusses recent advancements in FECDs with additional functionalities such as sensing,photochromism,and energy storage.Finally,the remaining challenges and potential research directions for the future of viologen-based FECDs are addressed.展开更多
Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resis...Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.展开更多
A scheme is presented to generate atomic entanglement by detecting the transmission spectrum of a coupled- cavity system. In the scheme, two 3-level atoms are trapped in separate cavities coupled by a short optical fi...A scheme is presented to generate atomic entanglement by detecting the transmission spectrum of a coupled- cavity system. In the scheme, two 3-level atoms are trapped in separate cavities coupled by a short optical fiber, and the atomic entanglement could be realized in a heralded way by detecting the transmission spectrum of the coupled-cavity system.展开更多
We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum A...We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.展开更多
ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition （MOCVD） technology. We used an uninterrupted growth method to simplify the fabrication...ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition （MOCVD） technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap （7. 7eV） and high dielectric constant （9.8）. The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively.展开更多
We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities i...We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.展开更多
基金financial support from the National Natural Science Foundation of China(22105106)the Natural Science Foundation of Jiangsu Province of China(BK20210603)+1 种基金the Nanjing Science and Technology Innovation Project for overseas Students(NJKCZYZZ2022–05)the Start-up Funding from NUPTSF(NY221003)。
文摘Electrochromic technology has gained significant attention in various fields such as displays,smart windows,biomedical monitoring,military camouflage,human-machine interaction,and electronic skin due to its ability to provide reversible and fast color changes under applied voltage.With the rapid development and increasing demand for flexible electronics,flexible electrochromic devices(FECDs)that offer smarter and more controllable light modulation hold great promise for practical applications.The electrochromic material(ECM)undergoing color changes during the electrochemical reactions is one of the key components in electrochromic devices.Among the ECMs,viologens,a family of organic small molecules with 1,1'-disubstituted-4,4'-dipyridinium salts,have garnered extensive research interest,due to their well-reversible redox reactions,excellent electron acceptance ability,and the ability to produce multiple colors.Notably,viologen-based FECDs demonstrate color changes in the liquid or semisolid electrolyte layer,eliminating the need for two solid electrodes and thus simplifying the device structure.Consequently,viologens offer significant potential for the development of FECDs with high optical contrast,fast response speed,and excellent stability.This review aims to provide a comprehensive overview of the progress and perspectives of viologen-based FECDs.It begins by summarizing the typical structure and recent exciting developments in viologen-based FECDs,along with their advantages and disadvantages.Furthermore,the review discusses recent advancements in FECDs with additional functionalities such as sensing,photochromism,and energy storage.Finally,the remaining challenges and potential research directions for the future of viologen-based FECDs are addressed.
基金Financial support from the University Grants Commission ofIndia through the Major Research Project(F.No.40-28/2011(SR))the DST Grant(D.O.No.SR/S2/CMP-35/2004)
文摘Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.
基金supported by the National Natural Sciences Foundation of China(Grant Nos.11204080,11274112,91321101,and 61275215)the Fundamental Research Funds for the Central Universities(Grant No.WM1313003)
文摘A scheme is presented to generate atomic entanglement by detecting the transmission spectrum of a coupled- cavity system. In the scheme, two 3-level atoms are trapped in separate cavities coupled by a short optical fiber, and the atomic entanglement could be realized in a heralded way by detecting the transmission spectrum of the coupled-cavity system.
基金Supported by the National Natural Science Foundation of China under Grant No 60906022, the Tianjin Natural Science Foundation under Grant No 10JCYBJC01100, and the Scientific Developing Foundation of Tianjin Education Commission under Grant No 20070805.
文摘We demonstrate that the electroluminescent performances of organic light-emitting diodes （OLEDs） are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device （turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V）. Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL （3.11 cd/A at 7 V）. The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60877020 and 60976010.
文摘ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition （MOCVD） technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap （7. 7eV） and high dielectric constant （9.8）. The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10774001, 60736033, 60776041 and 60876041, and National Basic Research Program of China under Grant Nos 2006CB604908 and 2006CB921607, and the National Key Basic R＆D Plan of China under Grant Nos TG2007CB307004.
文摘We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
