This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measu...This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measuring the different line lengths is quantified, next the coupling between the probe-heads and the wafer surface is investigated and finally an upper frequency validity limit for the standard Open-Short de-embedding method is given. The measured results have been confirmed thanks to the use of an electro-magnetic simulator.展开更多
An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a grea...An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa-rameter extraction.It is necessary to accurately determine and effectively eliminate the parasitic effect,so as to avoid the error propagation to the internal circuit parameters.In this paper,in order to obtain higher accuracy of parasitic parameters,parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters.The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param-eters up to 40 GHz for InP HEMT.In 0.1-40 GHz InP HEMT,the average relative error of the optimization algorithm is about 9%higher than that of the analysis method,which verifies the validity of the parasitic parameter extraction method.The extraction of parasit-ic parameters not only provides a foundation for the high-precision extraction of small sig-nal intrinsic parameters of HEMT devices,but also lays a foundation for the high-preci-sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.展开更多
A full planar tunable band pass resonator is introduced, which is constructed by using novel symmetric step impedance resonator （SIR） and hyperabrupt varactors for wide bandwidth tuning and size reduction. The equiv...A full planar tunable band pass resonator is introduced, which is constructed by using novel symmetric step impedance resonator （SIR） and hyperabrupt varactors for wide bandwidth tuning and size reduction. The equivalent circuit model of the proposed resonator is set up. Theoretical analysis based on transmission line as well as odd and even-mode method is completed. The attractiveness of the approach presented lies in its simplicity. Based on the detailed analysis, a 6 GHz to 10 GHz varactor tuned resonator is designed, fabricated, and measured. It shows wideband tuning ability of 37%. The experimental results of the resonator have a good agreement with the analysis results.展开更多
文摘This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measuring the different line lengths is quantified, next the coupling between the probe-heads and the wafer surface is investigated and finally an upper frequency validity limit for the standard Open-Short de-embedding method is given. The measured results have been confirmed thanks to the use of an electro-magnetic simulator.
文摘An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa-rameter extraction.It is necessary to accurately determine and effectively eliminate the parasitic effect,so as to avoid the error propagation to the internal circuit parameters.In this paper,in order to obtain higher accuracy of parasitic parameters,parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters.The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param-eters up to 40 GHz for InP HEMT.In 0.1-40 GHz InP HEMT,the average relative error of the optimization algorithm is about 9%higher than that of the analysis method,which verifies the validity of the parasitic parameter extraction method.The extraction of parasit-ic parameters not only provides a foundation for the high-precision extraction of small sig-nal intrinsic parameters of HEMT devices,but also lays a foundation for the high-preci-sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.
文摘A full planar tunable band pass resonator is introduced, which is constructed by using novel symmetric step impedance resonator （SIR） and hyperabrupt varactors for wide bandwidth tuning and size reduction. The equivalent circuit model of the proposed resonator is set up. Theoretical analysis based on transmission line as well as odd and even-mode method is completed. The attractiveness of the approach presented lies in its simplicity. Based on the detailed analysis, a 6 GHz to 10 GHz varactor tuned resonator is designed, fabricated, and measured. It shows wideband tuning ability of 37%. The experimental results of the resonator have a good agreement with the analysis results.
