用异佛尔酮二异氰酸酯(IPDI)、聚乙二醇(PEG-6000)、环氧树脂E-51为原料合成聚氨酯型反应性乳化剂(PURE),将PURE与环氧树脂E-44混合后与γ-缩水甘油醚氧丙基三甲氧基硅烷(KH560)改性的单封端四乙烯五胺反应,制备了非离子型水性环氧固化...用异佛尔酮二异氰酸酯(IPDI)、聚乙二醇(PEG-6000)、环氧树脂E-51为原料合成聚氨酯型反应性乳化剂(PURE),将PURE与环氧树脂E-44混合后与γ-缩水甘油醚氧丙基三甲氧基硅烷(KH560)改性的单封端四乙烯五胺反应,制备了非离子型水性环氧固化剂。考察了PURE和KH560含量对固化物柔韧性及耐热性的影响。结果表明,当PURE质量分数为15%、KH560摩尔分数为6%时,固化剂稳定性良好,环氧树脂固化膜的综合性能最佳,冲击强度为19.35 k J/m2,拉伸强度为38.7 MPa,吸水率为2.85%,热失重5%和50%的温度分别为207℃和372℃。展开更多
The cleaning of copper interconnects after chemical mechanical planarization （CMP） process is a crit- ical step in integrated circuits （ICs） fabrication. Benzotriazole （BTA）, which is used as corrosion inhibitor...The cleaning of copper interconnects after chemical mechanical planarization （CMP） process is a crit- ical step in integrated circuits （ICs） fabrication. Benzotriazole （BTA）, which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy （SEM） review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance.展开更多
文摘用异佛尔酮二异氰酸酯(IPDI)、聚乙二醇(PEG-6000)、环氧树脂E-51为原料合成聚氨酯型反应性乳化剂(PURE),将PURE与环氧树脂E-44混合后与γ-缩水甘油醚氧丙基三甲氧基硅烷(KH560)改性的单封端四乙烯五胺反应,制备了非离子型水性环氧固化剂。考察了PURE和KH560含量对固化物柔韧性及耐热性的影响。结果表明,当PURE质量分数为15%、KH560摩尔分数为6%时,固化剂稳定性良好,环氧树脂固化膜的综合性能最佳,冲击强度为19.35 k J/m2,拉伸强度为38.7 MPa,吸水率为2.85%,热失重5%和50%的温度分别为207℃和372℃。
基金supported by the Natural Science Foundation of Hebei Province,China(No.F2015202267)the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology(No.2015007)
文摘The cleaning of copper interconnects after chemical mechanical planarization （CMP） process is a crit- ical step in integrated circuits （ICs） fabrication. Benzotriazole （BTA）, which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy （SEM） review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance.
