NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the ...NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.展开更多
Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative d...Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f < 450 GHz, when compared with n-GaAs films f < 44 GHz. This work provides a way to achieve a frequency conversion and amplification of micro- and millimeter-waves.展开更多
Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It...Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.展开更多
AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applicati...AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications.展开更多
The La2/3Cal/3Mn03_σ film has been deposited on the （001） SrTiO3 substrate and its temper- ature-dependent photoconductive properties have been investigated from 80 to 300 K. The La2/3Cal/3MnO3-σ film has a novel ...The La2/3Cal/3Mn03_σ film has been deposited on the （001） SrTiO3 substrate and its temper- ature-dependent photoconductive properties have been investigated from 80 to 300 K. The La2/3Cal/3MnO3-σ film has a novel photoelectric property due to its oxygen-deficient structure. We observed laser-induced giant negative photoresistance of the sample in a wide temperature range. The change rate of negative photoresistance was nearly 100% at the low temperature when the sample was irradiated by 532 nm laser. In addition, this effect was sensitive to the power of laser irradiation. The oxygen-deficiency of La2/3Cal/3Mn03-σ film seems to have an impact on the laser-induced resistance variation. The experimental results made the La2/3Cal/3MnO3_σ film a promising application as a photoswitch device.展开更多
The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventio...The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventional NBS degradation with negative shift of the transfer curves is absent.The on-state current is decreased,but the subthreshold characteristics are not affected.The gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias dependence.As confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.展开更多
文摘NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.
文摘Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f < 450 GHz, when compared with n-GaAs films f < 44 GHz. This work provides a way to achieve a frequency conversion and amplification of micro- and millimeter-waves.
基金supported by the National Natural Science Foundation of China.
文摘Magnetoresistanoe in the temperature region from 300 K to liquid helium temperature has been measured on good (100) oriented La2/3Ca1/3MnO2 thin films prepared by d.c. magnetron sputtering on ZrO2 (100) substrates. It is found that there appears a resistance peak at about TP = 72K at zero magnetic field, and this peak moves to higher temperature with increasing field H, and R decreases simultaneously. However, the magnetoresistance ratio MR = 5R /R (H) = (Ro~ RH) /RH has a different temperature dependence. There are also MR peaks, but the temperature of maximum MR is at about 25 K which does not change with changing external magnetic field. The heat treatment (annealed at 700C in 105’Pa O2 for 30min) will make R reduce dramatically and has an effect on the temperature dependence of R and its MR.
文摘AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications.
基金supported by National Basic Research Program of China(973 Program)(Grant No.2014CB7443-02)Specially Founded Program on National Key Scientific Instruments and Equipment Development(Grant No.2012YQ140005)
文摘The La2/3Cal/3Mn03_σ film has been deposited on the （001） SrTiO3 substrate and its temper- ature-dependent photoconductive properties have been investigated from 80 to 300 K. The La2/3Cal/3MnO3-σ film has a novel photoelectric property due to its oxygen-deficient structure. We observed laser-induced giant negative photoresistance of the sample in a wide temperature range. The change rate of negative photoresistance was nearly 100% at the low temperature when the sample was irradiated by 532 nm laser. In addition, this effect was sensitive to the power of laser irradiation. The oxygen-deficiency of La2/3Cal/3Mn03-σ film seems to have an impact on the laser-induced resistance variation. The experimental results made the La2/3Cal/3MnO3_σ film a promising application as a photoswitch device.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61971299 and 61974101)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201201)+1 种基金the Fund from Suzhou Science and Technology Bureau(Grant No.SYG201933)the Fund from the State Key Laboratory of ASIC and System,Fudan University(Grant No.2021KF005)
文摘The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventional NBS degradation with negative shift of the transfer curves is absent.The on-state current is decreased,but the subthreshold characteristics are not affected.The gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias dependence.As confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.
